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  1. Schein, Friedrich-Leonhard; von Wenckstern, Holger; Frenzel, Heiko; Grundmann, Marius

    ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type $\hbox{ZnCo}_{2}\hbox{O}_{4}$ Gate

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    Institute of Electrical and Electronics Engineers (IEEE), 2012

    Published in: IEEE Electron Device Letters, 33 (2012) 5, Seite 676-678

  2. Klupfel, Fabian Johannes; Schein, Friedrich-Leonhard; Lorenz, Michael; Frenzel, Heiko; von Wenckstern, Holger; Grundmann, Marius

    Comparison of ZnO-Based JFET, MESFET, and MISFET

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    Institute of Electrical and Electronics Engineers (IEEE), 2013

    Published in: IEEE Transactions on Electron Devices, 60 (2013) 6, Seite 1828-1833

  3. Grundmann, Marius; Frenzel, Heiko; Lajn, Alexander; Lorenz, Michael; Schein, Friedrich; von Wenckstern, Holger

    Front Cover (Phys. Status Solidi A 6/2010)

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    Wiley, 2010

    Published in: physica status solidi (a), 207 (2010) 6

  4. Frenzel, Heiko; Lajn, Alexander; von Wenckstern, Holger; Lorenz, Michael; Schein, Friedrich; Zhang, Zhipeng; Grundmann, Marius

    MESFET Electronics: Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits (Adv. Mater. 47/2010)

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    Wiley, 2010

    Published in: Advanced Materials, 22 (2010) 47, Seite 5323-5323