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Ravi, K. V. [Author] ; Vysockoj, V. V. [Other]; Gorina, S. N. [Other]

Defekty i primesi v poluprovodnikovom kremnii

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Moskva: "Mir", 1984
Wünstel, Klaus [Author]

Kapazitätstransienten-Untersuchungen an tiefen Störstellen in Silizium

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1982
Knack, Steffen [Author]

Copper- and hydrogen-related defects in silicon

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Berlin: Logos-Verl., 2002
Weider, Dietmar [Author]

Selbstkonsistente Berechnung von Punkt- und Paarstörstellen in Silicium

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1989
Fröhner, Karl-Heinz [Author]

Photoleitfähigkeits- und Photokapazitätsmessungen an Eisen-dotiertem Silizium

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1982
Mühe, Andreas [Author]

Über den Sauerstoff-Transport bei der industriellen Silicium-Kristallzüchtung nach dem Czochralski-Verfahren

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2001
Wirbeleit, Frank [Author]

The atomic structure of point defects in semiconductors by improved EPR, ENDOR data analysis - [2. Aufl.]

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Dresden: Büro-Frank, 2010
Spindler, Oswald [Author]

Fundamentale Substrukturen und Defekte in Kristallgittern des tetraedrisch kovalenten Typs

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1982
Pichler, Peter [Author]

Intrinsic point defects, impurities, and their diffusion in silicon

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Wien; New York: Springer, 2004

Published in: Computational microelectronics
Klettke, Oliver [Author]

Bauelement-relevante Defekte in Silicium und Siliciumkarbid

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2002
Köpf, Andreas [Author]; Lassmann, Kurt [Author]

Linear Stark and nonlinear Zeeman coupling to the ground state of effective mass acceptors in silicon

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1992 ; Online-Ausg.: Stuttgart: Universitätsbibliothek der Universität Stuttgart, 2009
Goe͏̈r, Anne M. de [Author]; Locatelli, Marcel [Author]; Lassmann, Kurt [Author]

A study of the ground state of acceptors in silicon from thermal transport experiments

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1981 ; Online-Ausg.: Stuttgart: Universitätsbibliothek der Universität Stuttgart, 2009
Kaden, Thomas [Author]

Temperatur- und injektionsabhängige Photospannungsmessungen zur Defektcharakterisierung in kristallinem Silizium

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2014
Ostheim, Lars [Author]

Effekt der von Bor und Stickstoff induzierten isovalenten Störstellen auf den Leitungsbandtransport in III-V-Halbleitern

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https://d-nb.info/1166053415/34

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Gießen: Universitätsbibliothek, 2018
Greulich-Weber, Siegmund [Author]

ENDOR-Untersuchungen an Chalkogenen in Silizium

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Paderborn: Universitätsbibliothek, 1987
Ambrosy, Anton [Other]; Lassmann, Kurt [Other]; Goe͏̈r, Anne M. de [Other]; Salce, Bernard [Other]; Zeile, Heinrich [Other]

Influence of defects on the splitting of the acceptor ground state in silicon

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Stuttgart: Universitätsbibliothek der Universität Stuttgart, 1984 ; Online-Ausg.: 2009
Bondarenko, Vladimir [Author]

Positron annihilation study of equilibrium point defects in GaAs

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Klug, Jan N. [Author]

Technologie und pysikalische Eigenschaften strahlungsinduzierter Zentren in Silizium

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2012
Karzel, Philipp [Author]

H-Passivierung von multikristallinem Silizium : Untersuchung der Bindungsenergien von Wasserstoff an Defekten

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2008
Zierer, Robert [Author]

Wechselwirkungen von interstitiellem Eisen mit Defekten im multikristallinen Silizium

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2014

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