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Berkner, Jörg [Author]

Kompaktmodelle für Bipolartransistoren : Praxis der Modellierung, Messung und Parameterbestimmung - SGP, VBIC, HICUM und MEXTRAM ; mit 57 Tabellen

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Renningen: expert-Verl., 2002

Published in: Reihe Technik
Gad, Horst [Author]

Simulation von Feldeffekttransistoren bei kleinen Drainströmen - [1. Aufl.]

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Opladen: Westdeutscher Verlag, 1978

Published in: Nordrhein-Westfalen: Forschungsberichte des Landes Nordrhein-Westfalen ; 2705
Scholze, Andreas [Author]

Simulation of single electron devices

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2000 ; Mikrofiche-Ausg.
Schurack, Eduard [Author]

Nichtlineare frequenzabhängige thermische Leistungsrückwirkung in Bandpaß-Transistorenverstärkern für höhere Frequenzen : Analyse der Effekte und Kompensation der Rückwirkung

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1993
Kaschura, Felix [Author] ; Technische Universität Dresden

The organic permeable base transistor : operation principle and optimizations

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Dresden: Technische Universität Dresden, 2017
Meller, Gregor [Editor]; Grasser, Tibor [Other]; Baldo, M. A. [Other] ; SISPAD 12 2007 Wien

Organic electronics

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Berlin; Heidelberg: Springer, 2010

Published in: Advances in polymer science ; 223
Maier, Christian [Author]

Ein Modell zur Simulation von Gleichstrom- und Kleinsignalverhalten des Bipolartransistors

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1988
Feng, Yukun [Author] ; Schünemann, Klaus [Other]; Paul, Reinhold [Other] Technische Universität Hamburg-Harburg Arbeitsbereich Elektrotechnik III, Hochfrequenztechnik

Numerical simulation of two-dimensional electron transport in GaAs MESFETS using fully nonstationary transport models - [Als Ms. gedr.]

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Düsseldorf: VDI-Verl., 1991

Published in: Verein Deutscher Ingenieure: Fortschrittberichte VDI / 9 ; 114
Saß, Dieter [Author]

Logik- und Timing-Simulation digitaler MOS-Schaltungen auf Transistorebene - [Als Ms. gedr.]

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Düsseldorf: VDI-Verl., 1994

Published in: Verein Deutscher Ingenieure: Fortschrittberichte VDI / 9 ; 178
Moebus, Kai E. [Author]

Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs

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Dresden: TUDpress, Verl. der Wiss., 2011
Korndörfer, Falk [Author]

Zum thermischen Widerstand von Silicium-Germanium-Hetero-Bipolartransistoren

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Chemnitz: Universitätsverlag Chemnitz, 2014
Da̧browski, Jarek [Editor]; Weber, E. R. [Other]

Predictive simulation of semiconductor processing : status and challenges

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Berlin; Heidelberg [u.a.]: Springer, 2004

Published in: Springer series in materials science ; 72
Miura-Mattausch, Mitiko [Author]; Mattausch, Hans Jürgen [Author]; Ezaki, Tatsuya [Author]

The physics and modeling of mosfets : surface-potential model HiSIM

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New Jersey [u.a.]: World Scientific, 2008

Published in: International series on advances in solid state electronics and technology (ASSET)
Foty, Daniel P. [Author]

MOSFET modeling with SPICE : principles and practice

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Upper Saddle River, NJ: Prentice Hall PTR, 1997

Published in: Prentice Hall series in innovative technology
Rose, Petra [Author]

Simulationsuntersuchungen zu instabilen Zuständen von IGBTs

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Aachen: Shaker, 2004

Published in: Berichte aus der Elektrotechnik
Kopta, Arnost [Author]

Short-circuit ruggedness of high-voltage IGBTs

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Aachen: Shaker, 2010

Published in: Berichte aus der Elektrotechnik
Lindner, Thomas [Author]

Organische Feldeffekt-Transistoren: Modellierung und Simulation

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2005
Prüfer, Thomas [Author] ; Technische Universität Dresden

Formation of Si Nanocrystals for single electron transistors by ion beam mixing and self-organization : modeling and simulation

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Dresden, [2020?]
Kleindienst, Thorsten [Author]

2D-Computersimulation von A1GaAs/InGaAs Hetrostruktur-Feldeffekttransistoren

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2000 ; Mikrofiche-Ausg.
Göbel, Holger [Author]

Hybrid-Verfahren zur Modellierung leistungselektronischer Bauelemente - [Als Ms. gedr.]

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Düsseldorf: VDI-Verl., 1993

Published in: Verein Deutscher Ingenieure: Fortschritt-Berichte VDI / 21 ; 143

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