Media type: Book; Thesis Title: Reliability of high-k-metal gate field-effect transistors considering circuit operational constraints Contributor: Kupke, Steve [VerfasserIn] Corporation: Technische Universität Dresden imprint: Norderstedt: Books on Demand, 2015 Published in: Research at namlab Issue: 1. Auflage Extent: 118 Seiten; Illustrationen, Diagramme; 21 cm x 14.8 cm, 189 g Language: English ISBN: 9783741208690; 3741208698 RVK notation: ZN 4870 : Feldeffekt-Bauelemente allgemein; Feldeffekt-Transistoren ZN 4040 : Zuverlässigkeit elektronischer Bauelemente und Geräte Keywords: High-k Metal-Gate-Technik > Hafniumdioxid > High-k-Dielektrikum > MOS-FET > Statisches RAM > Schaltvorgang > Degradation > Schwellenspannung > Durchschlagspannung > Zuverlässigkeit Origination: University thesis: Dissertation, Technische Universität Dresden, 2015 Footnote:
Departmental Library DrePunct – open access area Shelf-mark: ZN 4870 K96 Item ID: 34121849 Status: Loanable
Central Library – stack Shelf-mark: 2016 8 018898 Item ID: 34121848 Status: Loanable, place order > Ordering possible ‒ please log in
Departmental Library DrePunct – stack Shelf-mark: 2016 8 018897 Item ID: 34121847 Status: Place order for use in library, no dispatch by interlibrary loan; delivery of photocopies possible > Ordering possible ‒ please log in