Footnote:
"SPIE Digital Library."--Website
Includes bibliographical references (pages 121-139) and index
Restricted to subscribers or individual electronic text purchasers
Description:
While most textbooks about scanning electron microscopy (SEM) cover the high-voltage range from 5-50 keV, this volume considers the special problems in low-voltage SEM and summarizes the differences between LVSEM and conventional SEM. Chapters cover the influence of lens aberrations and design on electron-probe formation; the effect of elastic and inelastic scattering processes on electron diffusion and electron range; charging and radiation damage effects; the dependence of SE yield and the backscattering coefficient on electron energy, surface tilt, and material as well as the angular and energy distributions; and types of image contrast and the differences between LVSEM and conventional SEM modes due to the influence of electron-specimen interactions
Preface -- Chapter 1. Introduction -- Chapter 2. Electron optics and instrumentation -- Chapter 3. Electron scattering and diffusion -- Chapter 4. Backscattered and secondary-electron diffusion -- Chapter 5. Specimen charging and damage -- Chapter 6. Signal formation and image contrast -- Chapter 7. Electron spectroscopic methods -- Summary -- Bibliography -- Index