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Domdey, Andreas [Author]; Hafkemeyer, Kristian M. [Author]; Krautschneider, Wolfgang [Author]; Schröder, Dietmar [Author] ; Technische Universität Hamburg-Harburg, Technische Universität Hamburg-Harburg Institut für Nanoelektronik

Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

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  • Media type: E-Article
  • Title: Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
  • Contributor: Domdey, Andreas [VerfasserIn]; Hafkemeyer, Kristian M. [VerfasserIn]; Krautschneider, Wolfgang [VerfasserIn]; Schröder, Dietmar [VerfasserIn]
  • Corporation: Technische Universität Hamburg-Harburg ; Technische Universität Hamburg-Harburg, Institut für Nanoelektronik
  • imprint: 26 May 2008
  • Published in: Advances in radio science ; 6(2008), Seite 205-207
  • Language: English
  • DOI: 10.15480/882.2332; 10.5194/ars-6-205-2008
  • ISSN: 1684-9973
  • Identifier:
  • Origination:
  • Footnote: Sonstige Körperschaft: Technische Universität Hamburg-Harburg
    Sonstige Körperschaft: Technische Universität Hamburg-Harburg, Institut für Nanoelektronik
  • Description: This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time. © Author(s) 2008.
  • Access State: Open Access