Physica status solidi: Volume 82, Number 2: April 16

Media type: E-Book

Title: Physica status solidi : Volume 82, Number 2: April 16

Contributor: Görlich [Editor]; Alario-Franco, M. A [Contributor]; Anstis, G. R [Contributor]; Atzkodt, V [Contributor]; Atzrodt, V [Contributor]; Babich, V . M [Contributor]; Baeansku, P . I [Contributor]; Bak-Misiuk, J [Contributor]; Baran, N . P [Contributor]; Bertrandt-Zytkowiak, M [Contributor]; Britun, V . F [Contributor]; Broda, Halina [Contributor]; Brudny, V.N [Contributor]; Bugay, A . A [Contributor]; Bulyshev, Y u . S [Contributor]; Bunget, I [Contributor]; Bushnev, L . S [Contributor]; Chaudouet, P [Contributor]; Chimczak, E [Contributor]; Chumlyakov, Yu . I [Contributor]; Cockayne, D . J . H [Contributor]; Dotsenko, Yu. P [Contributor]; Döhler, H [Contributor]; Eichhorn, F [Contributor]; Erbejt, J [Contributor]; Esipenko, V . F [Contributor]; Fedorov, V. A [Contributor]; Filippov, I. M [Contributor]; Fruchart, R [Contributor]; Gaidtjkov, G. N [Contributor]; Gbendel, M [Contributor]; Glinchuk, K. D [Contributor]; Gordon, W . S [Contributor]; Goscianska, I [Contributor]; Gottschalch, V [Contributor]; Hajko, V [Contributor]; Haktmann, U [Contributor]; Hirth, J. P [Contributor]; Hrobäb, M [Contributor]; Hòschl, P [Contributor]; Ioanid, A [Contributor]; Jain, Mukesh [Contributor]; Jalochowski, M [Contributor]; Jasinskaitè, R [Contributor]; Jäger, Ch [Contributor]; Kaambre, H [Contributor]; Kabpei, A. L [Contributor]; Kachubin, G. A [Contributor]; Kakntiialee, P [Contributor]; Kaminskii, A. A [Contributor]; Kashirskii, I. M [Contributor]; Katsapov, F. M [Contributor]; Kaverina, I . G [Contributor]; Kazakevich, L. A [Contributor]; Khac An, Dao [Contributor]; Khvostantsev, L . G [Contributor]; Klabes, R [Contributor]; Klabes, R [Contributor]; Korobtsov, V . V [Contributor]; Korotaev, A. D [Contributor]; Kovalchuk, V . B [Contributor]; Krishnan, R [Contributor]; Krivov, M.A [Contributor]; Krzesiñska, M [Contributor]; Kuchis, E . V [Contributor]; Kulda, J [Contributor]; Kuraishi, T [Contributor]; Kuznetsov, V. I [Contributor]; Lambert-Andron, B [Contributor]; Lange, H [Contributor]; Lange, H [Contributor]; Liu, Z [Contributor]; Lokhande, C.D [Contributor]; Lugakov, P . F [Contributor]; Madar, R [Contributor]; Maeda, T [Contributor]; Martinaitis, A [Contributor]; Matthai, J [Contributor]; Matysina, Z. A [Contributor]; Mayer, V. A [Contributor]; Mende, H . H [Contributor]; Meyer, H [Contributor]; Mixula, P [Contributor]; Motoc, Cornelia [Contributor]; Noguera, A [Contributor]; Olekhnovich, N . M [Contributor]; Orlandi, P [Contributor]; Osinskii, V. I [Contributor]; Otero-Diaz, L . C [Contributor]; Ovanesyan, K.L [Contributor]; Pawar, S.H [Contributor]; Peiemuth, A [Contributor]; Petrosyan, A.G [Contributor]; Pietsch, U [Contributor]; Pilyankevich, A . N [Contributor]; Pirouz, P [Contributor]; Podrezov, A. A [Contributor]; Popescu, M [Contributor]; Potapov, A.I [Contributor]; Prokhorovich, A. V [Contributor]; Pröhl, U [Contributor]; Ratajczak, H [Contributor]; Rigamonti, A [Contributor]; Rizdvyanetskh, D.R [Contributor]; Roatsch, Th [Contributor]; Romanov, S. I [Contributor]; Rosu, C [Contributor]; Rud, Yu.V [Contributor]; Saito, S [Contributor]; Sakalas, A [Contributor]; Sarkisoy, S. E [Contributor]; Scharff, W [Contributor]; Schmidt, G. K [Contributor]; Schnabel, B [Contributor]; Sehgal, H.K [Contributor]; Shironyak, G. O [Contributor]; Sidorov, V . A [Contributor]; Sinitskii, V. V [Contributor]; Smirnov, B. I [Contributor]; Snezhkova, T. N [Contributor]; Soria, J [Contributor]; Sorkin, B [Contributor]; Soumura, T [Contributor]; Stqeiecki, F [Contributor]; Sukhvalo, S. V [Contributor]; Szuta-Buchacz, T [Contributor]; Süssmann, H [Contributor]; Tamhankar, S.P [Contributor]; Thubzo, I [Contributor]; Timko, M [Contributor]; Tsikunov, A. V [Contributor]; Tyavlovskaya, E. A [Contributor]; Ueay, L [Contributor]; Vlahovici, N [Contributor]; Voelskow, M [Contributor]; Voelskow, M [Contributor]; Volkova, O. L [Contributor]; Wandel, K [Contributor]; Warrier, A.V.R [Contributor]; Wasim, S. M [Contributor]; Weinert, H [Contributor]; Weissmantel, C [Contributor]; Wieseb, E [Contributor]; Wieser, E [Contributor]; Wikth, Th [Contributor]; Woggon, Ulrike [Contributor]; Wosik, J [Contributor]; Zaginaichenko, S.Y [Contributor]; Zavodinskii, V . G [Contributor]; Zayats, N. S [Contributor]; Zentko, A [Contributor]; Zogal, O.J [Contributor]; Zolomy, I [Contributor]; Zotov, A. V [Contributor]; Zub, E . M [Contributor]; Zuberek, R [Contributor]

Published: Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe]

Issue: Reprint 2021

Extent: 1 Online-Ressource (370 p)

Language: English

DOI: 10.1515/9783112501580

ISBN: 9783112501580

Identifier:

Keywords: SCIENCE / General

Type of reproduction: [Online-Ausgabe]

Origination:

Footnote: In English
Mode of access: Internet via World Wide Web

Description: Frontmatter -- Classification Scheme -- Author Index -- Contents -- Review Article -- The Problem of Symmetry in Statistical Thermodynamics of Substitutional and Interstitial Ordered Solid Solutions -- Original Papers -- The Surface Density of the Acoustical Phonon States -- The Role of Reservoirs of Dipole-Dipole Interactions in Cross-Relaxation -- Note on the Debye Temperature of Palladium -- One Phonon versus Multiphonon Absorption in Small Ionic Crystals -- On the Optimization of Local Model Pseudopotentials -- The Optical Absorption by the Frenkel Exciton in V2O3 -- The Linear Jahn-Teller Effect for an Orbital Triplet -- Contribution of Configuration Interaction to the Intensity of Crystal Field Transitions in Tetrahedral Fe2+ Ion -- Variational Method in the Theory of Reciprocal Electron and Phonon Drag in Semiconductors -- Magnetic Susceptibility of Pure Boron -- Interband Faraday Rotation in Silicon -- Binding of an Exciton to a Donor-Acceptor Pair in a SemiconducFrontmatter -- Contents -- Original Papers -- Structure -- Solid Phase Epitaxial Growth Anisotropy of Vacuum-Deposited Amorphous Silicon -- A Volterra-Type Dislocation Model of a Low-Angle [001] Twist Boundary in an F.C.C. Crystal -- Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects -- Principal Component Analysis for Refractory Metal Silicide Investigations with Auger Electron Spectroscopy -- Extended Defects in Vanadium Doped Rutile -- Phase Transitions in Antimony at Hydrostatic Pressure up to 9 GPa -- Structural Perfection of Selective GaAs Regions in Si Substrate Windows -- Lattice properties -- Superelasticity Effects in Single Crystals of Cu-15% Al-2% Co with Non-Coherent Particles Due to Twinning -- Method for Obtaining the Spectrum of Plastic Strains of Mesoscopic Volume Elements in Fatigued Materials Investigated by X-Bays -- Hypersonic Wave Attenuation in Yttrium Aluminum Garnet and Gadolinium Gallium Garnet -- Defects, atotor II. Binding Energy and Critical Separation in the Case of a Coulomb Interaction —> Influence of the Polarization Effects -- Orientation-Dependent Resonant Baman Scattering in InSb and GaSb at the E1—Ei+∆i Region -- Rapid Variation of the Superconducting Transition Temperature in the AlMg Phase -- On the Mobility of Holes in Deformed Semiconductors -- Absorption Edge and Urbach's Rule in ZnO -- M-Center Singlet to Triplet Excitation in KCl -- Convergence of Lattice Sums in Hartree-Fock LCAO Calculations -- Decoupling of Correlation Functions in Calculating the Transport Coefficients -- Longitudinal Magnetoresistance of n-Type Germanium in the Quantum Limit -- High-Field Transport and Low-Field Mobility in Tellurium Single Crystals -- Crystal Potentials and One-Electron States near the Fermi Surface of Calcium -- Strong Coupling between Proton and Phonon in KDP -- ESCA Studies of Some AIII BV Compounds with Ga and As -- On a Variational Localization of Wannier Functions --mistic aspects -- A Quantitative Analysis of Image Contrast from Extrinsic Stacking Faults -- Fracture in LiF Bicrystals at Plastic Deformation -- Motion of Partial Dislocation in Silicon Carbide -- Dynamic Alterations of the Surface Composition during Sputtering of Silicides -- Interaction of Radiation Defects with the Surface of Silicon -- Low-Energy Implantation of Arsenic in Silicon -- Magnetism -- The Influence of Anisotropy-Controlled Neel Relaxation on Magnetostatic Properties of Ferrofluids -- Planar Hall Effect in Thin Amorphous RE-TM Films with Perpendicular Anisotropy -- Extended electronic states and transitions -- Electron Tunnelling in Pb/Ag Ultrathin Layered Structures -- Localized electronic states and transitions -- A New (Non-Copper-Induced) 1.35 eV Emission Band in n-Type GaAs -- The Effect of Dislocations on the Charge-Carrier Recombination Processes in Irradiated Silicon -- Current DLTS Spectra of MIS Structures Due to Dielectric Polarization of the Insulator Underdamped Soft Tunnelling Modes in Hydrogen-Bonded Ferroelectrics below Tc -- A Further Synthesis of Sextic and Integral Theories for Dislocations and Line Forces in Anisotropic Media -- The Effect of a Line Potential Parallel to an External Magnetic Field on Electronic Eigenstates -- X-Ray Emission Study of the Electronic Structure of Aluminium-Gold and Aluminium-Copper Alloys -- Comments on the Evidence for Sharp and Gradual Optical Absorption Edges in Amorphous Germanium -- Resonance Raman Scattering in Group Vb Semimetals: As, Sib, and Bi -- Binding Energy of Excitonic Molecules in Isotropie Semiconductors -- A Decoupling Procedure for Green Functions: Test at the Ising Model and Application to an Extended Hubbard Model -- Investigation of k = 0 Phonons in Bi, Cd, Mg, and Zn by Raman Scattering -- Optical Absorption by Free Polarons in CdO -- Photoemission and Density of Valence States of the II-VI Compounds II. ZnSe, CdS, and HgS -- Study of Broadening of the NMR Line Due to Di -- Model of the Electroluminescence in Short-Pulse-Excited Thin-Film Structures Based on ZnS: Mn -- The Effect of Heat Treatment on Compensated CZ Silicon -- Electric transport -- Photoconductivity and Energy Level Structure of 2,4,7-Trinitro-9-Fluorenone Thin Films -- The Effect of Void Size on the Resistivity of Sintered Tungsten -- Transport Properties of n-Type CuInSe2 -- Doping Properties of Pb and Ge in Bi2Te3 and Sb2Te3 -- Electrical and Galvanomagnetic Properties of Films in the CuxFe1-xCr2S4 System -- Photovoltaic Effects in Nematic and Cholesteric Mesophases Containing Nonmesogenic Compounds -- Device-related phenomena -- The Double SQUID as a Digital Memory Cell -- Short Notes -- Structure -- Commensurate-Commensurate Phase Transitions in (NH4)2CoCl4 -- Epitaxial Regrowth of Amorphous or Polycrystalline Silicon Layers on Silicon Single Crystals and Bridging Epitaxy by Flash Lamp Irradiation -- On the Phase Transition of KH2PO4 at T 110°C -- On the Phase Transitioslocations by the Monte Carlo Method -- Screening of a Static Charge in the Electron Liquid -- A Quantitative Study of the Stabilization Field for 180° Walls in Iron Single Crystal Sheets Containing Solute Nitrogen -- Density of States and Conductivity in Highly Impure Semiconductors -- Anisotropic Electron Scattering by Interstitial Hydrogen Impurities in Copper -- A Model of the Electrical Transport Phenomena in Imperfect Crystals of Copper Phthalocyanine II.

Surface States of Phthalocyanine Single Crystals -- Optical Spectra and Electroabsorption of CdP2 and CdP4 Single Crystals -- Interface and Surface Polaritons of Semiinfinite Biaxial Crystals -- Effects of Anisotropic Spin-Orbit Interaction on the Splitting of d2 Configuration Orbital Cubic Triplets in a Trigonal Field -- The Phonon Drag in Wurtzite-Type Semiconductors -- Raman Investigation of the Phonon Spectrum in Single Crystalline ß-Boron -- On the Theory of "Heating" Acousto-Electric Nonlinearity in Semiconductors -- Errn and Crystal Field Effects in FeSiF6*6H2O2 -- Détermination de la structure cristallographique de la phase de type G Ni16Mn6As7 -- Lattice properties -- The Linear Thermal Expansion Coefficient of a GaxIn1-xAsyP1-y Layer on InP:Sn Substrate -- Defects, atomistic aspects -- Small Angle Neutron Scattering on a Reactor Beam Irradiated Silicon Single Crystal -- An Approximate Method for Determining the Segregation Coefficient of the Boron Drive Diffusion in Oxidizing Ambients -- VK Centres in Thermo-Exoemission from CsBr:Tl -- Multipulse 1H NMR Study of Proton Self-Diffusion in Scandium and Lutetium Dihydride -- Magnetism -- Isotopic Effect in Neutron-Irradiated Fe40Ni40B20 Alloys -- The Structural Diagrams of Magnetic Decompositive Alloys -- Magnetic Moment and Its Temperature Variation of Amorphous (Fe0.5Ni0.5)1-xBx Alloys -- Magnetic Moment of Amorphous Co1-xNbx Alloys and Friedel' s Model -- Magnetoelastic Properties of Fe1-xBx Amorphous Thin Films -- Extended electronic statesatum -- Erratum -- Short Notes -- Lattice Reflection of Ga2S3 Crystals -- Phonon-Assisted DC Hopping Conductivity of Amorphous Semiconductors and Semiconducting Glasses -- Adhesion Energy between Metals: Effect of Ionic Potentials -- On First Order Green Function Theory with Spin Operators -- Excitons in CdS at High Excitation Levels -- Photoelectric Properties of Silver at the Plasma Frequency -- Temperature Dependence of Infrared Absorption and Raman Scattering by Small NH4Cl Crystals -- An Electrical Study of the Semiconductor —*• Metallic Phase Transformation in Indium Antimonide at Elevated Temperature -- The Immiscibility of Li and Na with Alkali Elements -- On the De Haas-Van Alphen Effect in Thin Conductors -- Optical Phonons of Bi2Te3 -- The Identity of the Native Donor in CdS at High Cd Pressures -- On the Density-of-States Function for Non-Parabolic Energy Bands in Semiconductors under the Influence of Strong Magnetic Quantization -- Surface Photovoltage of MoS2 and transitions -- Composition Dependence of the Optical Energy Gap in Pb1-xHgxTe Alloy Thin Films -- Localized electronic states and transitions -- Concentrational 3.urn Stimulated Emission Tuning in the (Gd1-XErx)3Al5O12 Crystal System -- Electric transport -- Electrical Properties of Electron- and Proton-Irradiated GaAs and ZnGeAS2 Solid Solutions -- Deposition of Bi2CdS4 Films by the Spray Pyrolysis Technique -- Native Acceptor Defects in Chlorine Doped Single Crystals of CdTe -- Device-related phenomena -- Temperature Dependence of Minority Carrier Lifetime in yPE GaP:N, Te -- Negative Differential Resistance in the I-U Characteristics of Surface Oxide Transistors -- Pre-Printed Titles -- of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Backmatter

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Physica status solidi - [Reprint 2021]

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