> Details
Abilcv, Ch. I
[Contributor];
Abu-Shady, A. I
[Contributor];
Abu-Zeid, M. E
[Contributor];
Adili, M. S
[Contributor];
Ahmed, S. R
[Contributor];
Amelinckx, S
[Contributor];
Babich, V. M
[Contributor];
Bandyopadhyay, T. K
[Contributor];
Baran, N. P
[Contributor];
Beauchamp, P
[Contributor];
Benhaddane, K
[Contributor];
Berger, G
[Contributor];
Berndt, K
[Contributor];
Bilbe, R. M
[Contributor];
Blanchin, M. G
[Contributor];
Boden, A
[Contributor];
Borimskh, V .V
[Contributor];
Borisenko, V. E
[Contributor];
Bose, M. S. C
[Contributor];
Bugai, A. A
[Contributor];
Bursill, L. A
[Contributor];
Buschow, K. H. J
[Contributor];
Chandra, Gyanesh
[Contributor];
Chaudhuri, S. R
[Contributor];
[...]
Physica status solidi
: Volume 86, Number 2: December 16
- [Reprint 2021]
Sharing
Reference
management
Direct link
Bookmarks
Remove from
bookmarks
Share this by email
Share this on Twitter
Share this on Facebook
Share this on Whatsapp
- Media type: E-Book
- Title: Physica status solidi : Volume 86, Number 2: December 16
- Contributor: Görlich [HerausgeberIn]; Rybka [MitwirkendeR]; Abilcv, Ch. I [MitwirkendeR]; Abu-Shady, A. I [MitwirkendeR]; Abu-Zeid, M. E [MitwirkendeR]; Adili, M. S [MitwirkendeR]; Ahmed, S. R [MitwirkendeR]; Amelinckx, S [MitwirkendeR]; Babich, V. M [MitwirkendeR]; Bandyopadhyay, T. K [MitwirkendeR]; Baran, N. P [MitwirkendeR]; Beauchamp, P [MitwirkendeR]; Benhaddane, K [MitwirkendeR]; Berger, G [MitwirkendeR]; Berndt, K [MitwirkendeR]; Bilbe, R. M [MitwirkendeR]; Blanchin, M. G [MitwirkendeR]; Boden, A [MitwirkendeR]; Borimskh, V .V [MitwirkendeR]; Borisenko, V. E [MitwirkendeR]; Bose, M. S. C [MitwirkendeR]; Bugai, A. A [MitwirkendeR]; Bursill, L. A [MitwirkendeR]; Buschow, K. H. J [MitwirkendeR]; Chandra, Gyanesh [MitwirkendeR]; Chaudhuri, S. R [MitwirkendeR]; Cui, P [MitwirkendeR]; Darvishov, N. G [MitwirkendeR]; Delaey, L [MitwirkendeR]; Deml, F [MitwirkendeR]; Dotsenko, Yu. P [MitwirkendeR]; Döhl, R [MitwirkendeR]; Ecob, R. C [MitwirkendeR]; Efendiev, Sh. M [MitwirkendeR]; El-Oker, M. M [MitwirkendeR]; Engelmann, H. J [MitwirkendeR]; Fahrnek, W. R [MitwirkendeR]; Fasold, D [MitwirkendeR]; Filoti, G [MitwirkendeR]; Florescu, V [MitwirkendeR]; Frauenheim, Th [MitwirkendeR]; Fritzer, H. P [MitwirkendeR]; Gabrielyan, V. T [MitwirkendeR]; Gatterer, K [MitwirkendeR]; Gerasimenko, N. N [MitwirkendeR]; Giehler, M [MitwirkendeR]; Glinchuk, K. D [MitwirkendeR]; Gribkovskii, V. V [MitwirkendeR]; Gruber, H [MitwirkendeR]; Haefner, H [MitwirkendeR]; Hamann, C [MitwirkendeR]; Hampl, P [MitwirkendeR]; Hashimoto, F [MitwirkendeR]; Hehl, K [MitwirkendeR]; Huang, Q [MitwirkendeR]; Ihara, S [MitwirkendeR]; Iwasaki, K [MitwirkendeR]; Jetschke, S [MitwirkendeR]; Kamiura, Y [MitwirkendeR]; Katyal, O. P [MitwirkendeR]; Kaviratne, P. De S [MitwirkendeR]; Ke, T. S [MitwirkendeR]; Kemmler-Sack, S [MitwirkendeR]; Khatko, V. V [MitwirkendeR]; Khvostantsev, L. G [MitwirkendeR]; Klabes, R [MitwirkendeR]; Kovalchuk, V. B [MitwirkendeR]; Krautz, E [MitwirkendeR]; Kuzmicz, W [MitwirkendeR]; Labunow, V. A [MitwirkendeR]; Landuyt, J. Van [MitwirkendeR]; Li, E. Y [MitwirkendeR]; Litovchenko, N. M [MitwirkendeR]; Lo, C [MitwirkendeR]; Loffler, H [MitwirkendeR]; Lovey, F. C [MitwirkendeR]; Lunn, B [MitwirkendeR]; Macht, M.-P [MitwirkendeR]; Mandache, S [MitwirkendeR]; Mattthäi, J [MitwirkendeR]; Mizera, E [MitwirkendeR]; Mooij, D. B. De [MitwirkendeR]; Mulay, L N [MitwirkendeR]; Muller, M [MitwirkendeR]; Munz, P [MitwirkendeR]; Nadoliisky, M. M [MitwirkendeR]; Nag, B. R [MitwirkendeR]; Naundorf, V [MitwirkendeR]; Nicholls, J. E [MitwirkendeR]; Nicolet, M-A [MitwirkendeR]; Nistor, C. I [MitwirkendeR]; Noort, H. M. Van [MitwirkendeR]; Oelgart, G [MitwirkendeR]; Oskooie-Tabrizi, M [MitwirkendeR]; Pan, E. T-S [MitwirkendeR]; Pannaparayil, T [MitwirkendeR]; Pickenhain, R [MitwirkendeR]; Pincik, E [MitwirkendeR]; Popitsch, A [MitwirkendeR]; Pozhidaev, E. D [MitwirkendeR]; Rheinlander, B [MitwirkendeR]; Roy, M. Deb [MitwirkendeR]; Rumak, N . V [MitwirkendeR]; Rustamov, P. G [MitwirkendeR]; Ryzhkin, I. A [MitwirkendeR]; Sadigov, F. M [MitwirkendeR]; Saenko, V. S [MitwirkendeR]; Salnik, Z. A [MitwirkendeR]; Seifert, M [MitwirkendeR]; Sevastianov, S. B [MitwirkendeR]; Shaw, D [MitwirkendeR]; Sheleg, A. U [MitwirkendeR]; Sheng, Y. Q [MitwirkendeR]; Shershel, V. A [MitwirkendeR]; Sidorov, V. A [MitwirkendeR]; Siebert, P [MitwirkendeR]; So, F. C. T [MitwirkendeR]; Sodolski, H [MitwirkendeR]; Spanu, V [MitwirkendeR]; Storbeck, F [MitwirkendeR]; Suzuki, K [MitwirkendeR]; Takei, H [MitwirkendeR]; Tendeloo, G. Van [MitwirkendeR]; Tennakone, K [MitwirkendeR]; Terletzki, H [MitwirkendeR]; Thurzo, I [MitwirkendeR]; Toshev, S. D [MitwirkendeR]; Totterdell, D. H. J [MitwirkendeR]; Tsiok, O. B [MitwirkendeR]; Tsunekawa, S [MitwirkendeR]; Tyutnev, A. P [MitwirkendeR]; Ulrici, W [MitwirkendeR]; Vaidya, S. N [MitwirkendeR]; Vanderwalker, D. M [MitwirkendeR]; Vannikov, A. V [MitwirkendeR]; Vasileva, T. K [MitwirkendeR]; Vershinina, N. V [MitwirkendeR]; Voelskow, M [MitwirkendeR]; Warita, Y [MitwirkendeR]; Watanabe, H. F. J [MitwirkendeR]; Werner, M [MitwirkendeR]; Wolf, D [MitwirkendeR]; Wruck, D [MitwirkendeR]; Wulf, F [MitwirkendeR]; Yan, S. C [MitwirkendeR]; Yudin, S. G [MitwirkendeR]; Zagozdzon-Wosik, W [MitwirkendeR]; Zaretskii, V. V [MitwirkendeR]; Zhu, M. F [MitwirkendeR]; Zoul, A [MitwirkendeR]
-
imprint:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Published in: Physica status solidi ; Volume 86, Number 2 ; A
- Issue: Reprint 2021
- Extent: 1 Online-Ressource (440 p)
- Language: English
- DOI: 10.1515/9783112501504
- ISBN: 9783112501504
- Identifier:
- Keywords: SCIENCE / General
- Type of reproduction: [Online-Ausgabe]
- Origination:
-
Footnote:
In English
Mode of access: Internet via World Wide Web
- Description: Frontmatter -- Classification Scheme -- Contents -- Original Papers -- Structure -- Investigation o! Amorphous W60Zr40 Film as a Diffusion Barrier in Metallization Schemes -- Structure and Properties of Silicon Dioxide Thermal Films (II) -- Refractive Index and Absorption Measurement in a Thin Layer by Two Reflection Measurements -- Extended Versus Small Defect Equilibria in Non-Stoichiometric Rutile (II) -- Quantitative Chemical Analysis of 3d Transition Metal Alloys by SXAPS -- The Nucleation of Ni Silicides on Dislocations and Twins in Silicon -- X-Ray Study of the Commensurate-Incommensurate Phase Transitions in a-ZnP2 -- Hyperfine Field Distribution in Metglasses -- Characterization of in Vitro Corroded Surfaces of Bioactive Glasses (P2O5-CaO-SiO2) with Infrared Reflection Spectroscopy -- Heterogeneous Nucleation of Precipitates in an AI-12 at% Zn Alloy at Dislocation Loops -- On the Nature of Various Stacking Defects in 18R Martensite in Cu-Al Alloys. A Study by High Resolution Electron Microscopy -- Lattice properties -- Theory of Melting (I) -- Pulsed Heating of Semiconductors -- Defects, atomistic aspects -- The Measurement of Dislocation Link Length Distributions in a Tilted TEM Foil -- Internal Friction Peaks of Super-High-Purity Aluminium at Medium Temperatures -- Measurement of the Diffusion Coefficient of Cobalt in Copper -- A Computation of (110) Intrinsic Stacking Fault Energies in B2 Ordered Alloys -- Influence of Carbon and Preannealing on the Formation of Oxygen-Induced Recombination Centres in Heat-Treated Silicon -- Alternative Mechanisms for the Diffusion of Sn and Zn in GaAs -- High-Temperature Internal Friction Peaks of Dilute Aluminum Alloys -- Magnetism -- Effect of Saturated Magnetic Field on Fatigue Life of Carbon Steel -- Crystal Structure, Magnetic Properties, and 57Fe Mössbauer Effect of PtFeSn -- Infrared Spectroscopic, Magnetic, and Mossbauer Studies of Aluminosilicate Cage Structures (Fe/H-Mordenites) for Syngas Conversion -- Localized electronic states and transitions -- Influence of Deep Surface Levels on C 77 Schottky Doping Profiles of n-GaAs VPE Layers -- On the Properties of Thermodonors-II in CZ-Si Crystals of High Carbon Content -- IR Emission and Sensitized Luminescence of the Trivalent Rare Earth Ions in 18R-Ba6B2W3O18 (B = Y, Er, Yb) -- Microinhomogeneities of Donor and Acceptor Distributions in n-Type LEC-GaAs from Free-Carrier Infrared Absorption -- Electric transport -- Anomalous Polarization Current in Dielectrics -- Concerning the Radiation-Induced Surface Conductivity in Polymers -- Inhomogeneities in Irradiated SiO2-Si Structures -- Ionic Conductivity in Agl1-xClx -- Electric Field-Induced Disorder-Order Transition in Organic Polycrystalline Films of Quasi-One-Dimensional Lead-Phthalocyanine -- Electronic Property Changes of n-Mo4O11 by Doping with Tungsten, Rhenium, and Vanadium -- Applicability of the Mayadas-Shatzkes Model on Electrical Resistivity of Polycrystalline Tin-Lead Alloy Films -- The Study of Electrical Properties of Poly crystalline Tin Films -- Submicron Electron Transport in Silicon at 300 and 77 K -- Electrical Properties of Ion Implanted and Short Time Annealed Polycrystalline Silicon -- Device-related phenomena -- Laterally Inhomogeneous Charge Build-Up in CMOS Inverters during Ionizing Irradiation -- Some Peculiar Features of Small-Signal Charge DLTS Response of GaAs MOS Capacitors -- Photoacoustic and Ellipsometric Study of Black Nickel Coatings on Copper Substrates -- The Study of Mode Characteristics of Metal Clad Dielectric Waveguides -- The Role of Copper as an Impurity in High Resistivity Cadmium Telluride and Its Influence on y-Ray Spectrometer Performance -- Effect of Annealing Ambients on the Performance of Thin Film n-CdSe Photoanodes -- Degradation of Green Light Emitting Diodes LPE-GaP : N (I) -- Erratum -- Erratum to: Linear Thermal Expansion of SrTiO3 -- Short Notes -- Propagation of Elastic Waves in Ice -- Some Characteristic Properties of Thermal Donor Formations in Oxygen- Containing Silicon at 450 °C -- Annealing Behavior of Shallow Acceptors in Quenched Germanium -- Gapless State and Anomalous Behaviour of Thermopower of Black Phosphorus a t Pressure up to 12 GPa -- Photoluminescence in PbMoxW1-xO4 Mixed Crystals -- Study of PZT Ceramics Doped with Cr2O3 -- Electrophysical Properties of CeBiTe3 -- Dual Implantation of Si and P into GaAs -- Activation of Li+ Ion Transport in Lithium Ferricyanide by Interstitial Water -- Emitter Efficiency of Si Bipolar Transistors — Structural and Electrical Investigations -- Pre-Printed Titles -- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Classification Scheme — Continued -- Backmatter
- Access State: Restricted Access | Information to licenced electronic resources of the SLUB