> Details
Abdurakhmanova, S. N
[Contributor];
Abushov, S. A
[Contributor];
Acharya, B. S
[Contributor];
Akkad, F. El
[Contributor];
Aksenov, A. E
[Contributor];
Antonov, V. E
[Contributor];
Antonova, T. E
[Contributor];
Ashwell, G. J
[Contributor];
Awad, A. A. Ghani
[Contributor];
Babu, V. Hari
[Contributor];
Bakalova, N. S
[Contributor];
Bala, W
[Contributor];
Baldan, A
[Contributor];
Becker, C
[Contributor];
Belash, I. T
[Contributor];
Bolshutkin, D. N
[Contributor];
Braunk, W
[Contributor];
Brezina, B
[Contributor];
Brodovoi, A. V
[Contributor];
Bryant, F. J
[Contributor];
Bugiel, E
[Contributor];
Capkova, P
[Contributor];
Care, C. M
[Contributor];
Charef, M
[Contributor];
[...]
Physica status solidi
: Volume 81, Number 2: February 16
- [Reprint 2021]
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- Media type: E-Book
- Title: Physica status solidi : Volume 81, Number 2: February 16
- Contributor: Görlich [HerausgeberIn]; Abdurakhmanova, S. N [MitwirkendeR]; Abushov, S. A [MitwirkendeR]; Acharya, B. S [MitwirkendeR]; Akkad, F. El [MitwirkendeR]; Aksenov, A. E [MitwirkendeR]; Antonov, V. E [MitwirkendeR]; Antonova, T. E [MitwirkendeR]; Ashwell, G. J [MitwirkendeR]; Awad, A. A. Ghani [MitwirkendeR]; Babu, V. Hari [MitwirkendeR]; Bakalova, N. S [MitwirkendeR]; Bala, W [MitwirkendeR]; Baldan, A [MitwirkendeR]; Becker, C [MitwirkendeR]; Belash, I. T [MitwirkendeR]; Bolshutkin, D. N [MitwirkendeR]; Braunk, W [MitwirkendeR]; Brezina, B [MitwirkendeR]; Brodovoi, A. V [MitwirkendeR]; Bryant, F. J [MitwirkendeR]; Bugiel, E [MitwirkendeR]; Capkova, P [MitwirkendeR]; Care, C. M [MitwirkendeR]; Charef, M [MitwirkendeR]; Chervonenkis, A. Ya [MitwirkendeR]; Chevallier, J [MitwirkendeR]; Chiang, C [MitwirkendeR]; Constant, E [MitwirkendeR]; Dean, P. J [MitwirkendeR]; Demian, S [MitwirkendeR]; Denisova, Z. L [MitwirkendeR]; Desnenko, V. A [MitwirkendeR]; Donecker, J [MitwirkendeR]; Easton, D. J [MitwirkendeR]; Edmond, J. T [MitwirkendeR]; Fabisiak, K [MitwirkendeR]; Falkevich, E. S [MitwirkendeR]; Farag, B [MitwirkendeR]; Fauquembergue, R [MitwirkendeR]; Fedorov, Yu. M [MitwirkendeR]; Fouskova, A [MitwirkendeR]; Gaworzewski, P [MitwirkendeR]; Gehlhoff, W [MitwirkendeR]; Gericke, W [MitwirkendeR]; Gessner, T [MitwirkendeR]; Goede, O [MitwirkendeR]; Goldsmid, H. J [MitwirkendeR]; Graiss, G [MitwirkendeR]; Gusakov, V. E [MitwirkendeR]; Gutan, V [MitwirkendeR]; Hagston, W. E [MitwirkendeR]; Hao, Chu [MitwirkendeR]; Hartmann, H [MitwirkendeR]; Hazzledine, P. M [MitwirkendeR]; Heimbrodt, W [MitwirkendeR]; Hommel, D [MitwirkendeR]; Hora, H [MitwirkendeR]; Hsu, Tsing-Wong [MitwirkendeR]; Ilichev, V. Ya [MitwirkendeR]; Iwasaki, K [MitwirkendeR]; Januskevicius, Z [MitwirkendeR]; Jung, T [MitwirkendeR]; Kabvaly, B [MitwirkendeR]; Kalben, J. Von [MitwirkendeR]; Karnthaler, H. P [MitwirkendeR]; Kathuria, S. P [MitwirkendeR]; Kato, M [MitwirkendeR]; Kemeny, G [MitwirkendeR]; Kessler, E [MitwirkendeR]; Khalilov, A. O [MitwirkendeR]; Khomohenko, V. S [MitwirkendeR]; Kirscht, F.-G [MitwirkendeR]; Kittler, M [MitwirkendeR]; Kleperis, J. J [MitwirkendeR]; Kluge, J [MitwirkendeR]; Kopytko, Yu. V [MitwirkendeR]; Korner, A [MitwirkendeR]; Koval, V [MitwirkendeR]; Kovalchuk, M. V [MitwirkendeR]; Kozak, L [MitwirkendeR]; Kraftmakher, G. A [MitwirkendeR]; Kreissl, J [MitwirkendeR]; Krier, A [MitwirkendeR]; Kucera, J [MitwirkendeR]; Kudin, A [MitwirkendeR]; Langer, J. M [MitwirkendeR]; Lehmann, G [MitwirkendeR]; Leksikov, A. A [MitwirkendeR]; Litovchenko, A. S [MitwirkendeR]; Lusis, A. R [MitwirkendeR]; Mach, R [MitwirkendeR]; Mallik, B [MitwirkendeR]; Malyshev, V. Yu [MitwirkendeR]; Mathieu, H [MitwirkendeR]; Maugin, G. A [MitwirkendeR]; Mazykin, V. V [MitwirkendeR]; Mehrer, H [MitwirkendeR]; Meriakri, V. V [MitwirkendeR]; Minev, M. R [MitwirkendeR]; Motogi, S [MitwirkendeR]; Mukhamedzhanov, E. Kh [MitwirkendeR]; Mukherjee, K [MitwirkendeR]; Mukherjee, M. L [MitwirkendeR]; Murthy, S. Ramana [MitwirkendeR]; Müller, G. O [MitwirkendeR]; Nagabhooshanam, M [MitwirkendeR]; Nakamura, Y [MitwirkendeR]; Nancheva, N. M [MitwirkendeR]; Niftiev, G. M [MitwirkendeR]; Nowell, I. W [MitwirkendeR]; Oelgart, G [MitwirkendeR]; Oksengendler, B. L [MitwirkendeR]; Orzeszko, S [MitwirkendeR]; Pasemann, M [MitwirkendeR]; Paul, G. L [MitwirkendeR]; Pavel, M [MitwirkendeR]; Pecherskaya, V. I [MitwirkendeR]; Pekar, V. S [MitwirkendeR]; Pippel, E [MitwirkendeR]; Popov, A. S [MitwirkendeR]; Popov, D. N [MitwirkendeR]; Raju, K. S [MitwirkendeR]; Rao, S. R [MitwirkendeR]; Rao, T. Seshagiri [MitwirkendeR]; Rashupkin, V. I [MitwirkendeR]; Redlich, L [MitwirkendeR]; Reinsperger, U [MitwirkendeR]; Rizk, A [MitwirkendeR]; Rouzeyre, M [MitwirkendeR]; Rozploch, P [MitwirkendeR]; Sauer, W [MitwirkendeR]; Scheifler, A [MitwirkendeR]; Schmalz, K [MitwirkendeR]; Schmidt, B [MitwirkendeR]; Schnürer, M [MitwirkendeR]; Schröder, K.-W [MitwirkendeR]; Schulz, G [MitwirkendeR]; Schulze, J [MitwirkendeR]; Selle, B [MitwirkendeR]; Sheikhet, E. G [MitwirkendeR]; Sitnikova, A. A [MitwirkendeR]; Sodeika, A [MitwirkendeR]; Sorokin, L. M [MitwirkendeR]; Stegmann, R [MitwirkendeR]; Stradins, J. P [MitwirkendeR]; Sumiyama, K [MitwirkendeR]; Sunta, C. M [MitwirkendeR]; Tagiev, B. G [MitwirkendeR]; Takeris, S. J [MitwirkendeR]; Talanin, I. E [MitwirkendeR]; Tartachnik, V [MitwirkendeR]; Theis, D [MitwirkendeR]; Thong, Dang Dinh [MitwirkendeR]; Tkachenko, V. D [MitwirkendeR]; Trapp, M [MitwirkendeR]; Trivedi, S [MitwirkendeR]; Tychina, I [MitwirkendeR]; Valvoda, V [MitwirkendeR]; Vlasenko, N. A [MitwirkendeR]; Völklein, F [MitwirkendeR]; Wafik, A. H [MitwirkendeR]; Wandel, K [MitwirkendeR]; Weinert, H [MitwirkendeR]; Woggon, U [MitwirkendeR]; Yavid, V. Yu [MitwirkendeR]; Yunusov, M. S [MitwirkendeR]; Zaikovskaya, M. A [MitwirkendeR]; Zedler, E [MitwirkendeR]; Zimmermann, J [MitwirkendeR]
-
imprint:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Published in: Physica status solidi ; Volume 81, Number 2 ; A
- Issue: Reprint 2021
- Extent: 1 Online-Ressource (464 p)
- Language: English
- DOI: 10.1515/9783112501344
- ISBN: 9783112501344
- Identifier:
- Keywords: SCIENCE / General
- Type of reproduction: [Online-Ausgabe]
- Origination:
-
Footnote:
In English
Mode of access: Internet via World Wide Web
- Description: Frontmatter -- Classification Scheme -- Contents -- Original Papers -- Structure -- The Use of a Gas-Flow Proportional Counter for the Energetical Analysis of Photoelectrons under X-Ray Diffraction Conditions -- Electron-Microscopic Study of Microdefects in Silicon Single Crystals Grown at High Speed -- Tiber Morphology Resulting from Solid State Coalescence of Spherical Precipitates -- Influence of Annealing Treatments on the Density of Amorphous Fe40Ni40P14B6 and Fe5Co70Si15B10 Alloys -- Microstructural Properties of the ß-NiAl Phase in the Ternary Ni-Based Ni-Al-Ta Superalloys -- Film and Interface Analysis of InSb MOS Structures -- Defects, atomistic aspects -- The Role of Nonelastic Nuclear Processes in the Formation of Defect Clusters in Semiconductors Irradiated with High-Energy Protons -- The Application of the Wulff Construction to Dislocation Problems -- High-Temperature Internal Friction Peaks of Pure Aluminum Single-, Bi-, and Polycrystals Measured with an Inverted Flexure Pendulum -- Magnetic Anomalies of Self-Diffusion and Co Heterodiffusion in a-Fe -- Magnetism -- Electrical and Magnetic Properties of the Fe18Cr(30-40)Ni Alloys at Low Temperatures -- Barkhausen Jumps in a Dual-Phase Steel Treated in the Intercritical Temperature Bange -- Effects of Magnetostriction on Vibrations of Bloch and Néel Walls -- Localized electronic states and transitions -- Thermoluminescence Emission and Decay Kinetics of NaCl:SnCI2 Single Crystals -- Investigation of the Recombination Mechanism in GaAs0.11P0.89:N -- Photoluminescence and Optical Properties of Lithium-Doped MgxZn1-xTe Alloys -- Electric transport -- Optical Phonon Assisted Hopping in (DPPE)(TCNQ)5(H2O) -- An Equation for Dynamic Switching in Amorphous Thin Films -- A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices -- DC Conductivity and ESR of Hydrogenated Amorphous Carbon Films -- A Method for the Measurement of Thermal Conductivity, Thermal Diffusivity, and Other Transport Coefficients of Thin Films -- Device-related phenomena -- Basics of Electron-Impact-Excited Luminescence Devices -- Efficiency and Saturation in AC Thin Film EL Structures -- Comparison of MOCYD-Grown with Conventional H-VI Materials Parameters for EL Thin Films -- Selected Analytical Tools Yield a Better Insight into Electroluminescent Thin Films -- Electroluminescence of SiOx-LnF3 Thin Films -- Concentration and Field Dependences of Electroluminescence Decay Kinetics in ZnS:Mn Thin Film Structures -- Degradation Model of Red GaP LEDs -- Transfer Effects in ODMR Spectra of ZnSe:Mn -- Direct Current Electroluminescence in Rare-Earth-Doped Zinc Sulphide -- Mechanism oi Excitation of Rare-Earth Complexes in Electroluminescence Devices -- Optical Study of ZnS:Mn Thin Films with High Mn Concentrations -- EPR Investigations of ZnS:Mn and ZnSe:Mn. Single Crystals, Powders, Thin-Film Structures -- On the Polarization of Center Radiation in an Optically Thin Layer. The Resonator Effect on the Phototransition Probability -- Annealing of Luminescent ZnSe:Mn Thin Films by a Scanning CW Laser Beam -- On the Time Behaviour of Electron Impact Excitation in Thin Film Electroluminescent Devices -- On the Mechanism of Electron-Impact-Excited Luminescence in AC Thin Film Devices: ZnSe:Mn -- Minority Carrier Lifetime Measurements by Photoluminescence at Room Temperature in GaAs1-xPxN, Te (x = 0.70) -- Erratum -- Erratum zu: Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigations -- Short Notes -- High Voltage Electron Microscopic (HVEM) Observations of Dislocations in Monocrystalline Gypsum -- 4-Cyano-1,3,6-triazacycl[3.3.3]azine — A Homomolecular Organic Semiconductor -- Glass-Crystal Transitions in Materials in the System As2S3-As2Te3 -- High Concentration Fe-Cu and Fe-Ag Alloys Produced by Vapor Quenching -- The Surface Roughness Effect in Texture Measurements by the Schulz X-Ray Reflection Method -- Light Scattering by Defects in TGS -- The Investigation of Hydrogen Diffusion in Palladium by the Chemichromic Effect -- Anomalous Heat Conduction of Ion-Implanted Amorphous Layers in Silicon Crystals Using a Laser-Probe Technique -- Quantitative EBIC Investigations on Bulk Stacking Faults in Silicon -- Internal Friction in Ni-Zn Ferrites -- On the Nature of the X-Centers in KC1, Studied by Positron Angular Correlation -- The Influence of Minority Carrier Injection on Subthreshold Defects in Silicon -- Temperature Dependence of the Magnetic Susceptibility of Teniolite -- Thermopower and Resistivity in Correlation to B-Site Magnetic Ordering in Cu-Ni and Cu-Cd Ferrospinels -- Magnetic Field Sign Effect on Resonance Absorption in Domain Walls of Orthoferrites -- Deep Levels in Czochralski p-Si Due to Heat Treatment at 600 to 900 °C -- Systems of Interacting Centers of Photoluminescence in RbMnF3 and KMnF3 -- Lasting Relaxations and Residual Conductivity in InSe1-xSx Single Crystals -- Anomalous Effects of Adsorption on the Electric Conductivity of Some Organic Semiconductor Powders under Pressure -- Superconductivity and Atomic Ordering of Pd-Cu-H Solid Solutions -- Radiation Defects in Single Crystals of Zinc Diphosphide -- Electrical Properties of Annealed InSb Thin Films -- Emission Patterns of Tb Doped ZnS Bulk Crystals -- Pre-Frinted Titles -- Pre-Frinted Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Classification Scheme —Continued -- Backmatter
- Access State: Restricted Access