Physica status solidi: Volume 109, Number 2: October 16

Media type: E-Book

Title: Physica status solidi : Volume 109, Number 2: October 16

Contributor: Görlich [Editor]; Abdellaoui, A [Contributor]; Agafov, B. L [Contributor]; Almodovae, N. Suarez [Contributor]; Ammer, Ch [Contributor]; Andrä, W [Contributor]; Anwar, M [Contributor]; Aruldhas, G [Contributor]; Aymerich, X [Contributor]; Babich, V. M [Contributor]; Bakan, N. P [Contributor]; Barniol, N [Contributor]; Bauee, C. L [Contributor]; Bezhan, N. P [Contributor]; Bezryadin, N. N [Contributor]; Biswas, S. K [Contributor]; Bkylowska, I [Contributor]; Bojanowski, B [Contributor]; Borisenko, V. E [Contributor]; Bosio, A [Contributor]; Boulesteix, C [Contributor]; Bruchlos, H [Contributor]; Budanov, A. V [Contributor]; Bugai, A. A [Contributor]; Canevari, V [Contributor]; Capelletti, R [Contributor]; Castañón, S. Díaz [Contributor]; Chakravartti, Lily [Contributor]; Chaudhubi, S [Contributor]; Chen, Jun [Contributor]; Chesnakov, V. A [Contributor]; Choudhury, A [Contributor]; Christodoulides, C [Contributor]; Christoph, V [Contributor]; Chumak, V. A [Contributor]; Cywinski, R [Contributor]; Dobrev, D. D [Contributor]; Donnadieu, A [Contributor]; Eick, T [Contributor]; El-Hiti, M [Contributor]; Farrés, E [Contributor]; Feng, Duan [Contributor]; Fu, Yao-Xian [Contributor]; Fuess, H [Contributor]; Fujita, S [Contributor]; García, S. García [Contributor]; Gasiot, J [Contributor]; Gastaldi, J [Contributor]; Gavarri, J. R [Contributor]; Gawalek, W [Contributor]; Grammatikakis, J [Contributor]; Grange, G [Contributor]; Grötzschel, R [Contributor]; Hai, N.T.Q [Contributor]; Hegde, G. M [Contributor]; Hergert, W [Contributor]; Hergt, T [Contributor]; Hfnnigfr, Karin [Contributor]; Hildebrandt, S [Contributor]; Hogarth, C. A [Contributor]; Hu, Mei-Shen [Contributor]; Hyodo, S [Contributor]; Höhne, R [Contributor]; Jayakumar, V. S [Contributor]; Jiang, Huilin [Contributor]; Jourdan, C [Contributor]; Karguppikab, A. M [Contributor]; Khang, D. D [Contributor]; Khatebf, F [Contributor]; Kishida, S [Contributor]; Klaua, M [Contributor]; Konchits, A. A [Contributor]; Kostadinov, L. N [Contributor]; Kovalchuk, V. B [Contributor]; Krispin, P [Contributor]; Krynicki, J [Contributor]; Kuhnert, R [Contributor]; Kulikova, O. V [Contributor]; Kulyuk, L. L [Contributor]; Kuriata, J [Contributor]; Kurzawa, M [Contributor]; Llamazares, J. L. Sánchez [Contributor]; Londos, C. A [Contributor]; Long, Qiwei [Contributor]; Lottermoser, W [Contributor]; Maeda, K [Contributor]; Maetin, L [Contributor]; Maksimenko, V. M [Contributor]; Manfredi, M [Contributor]; Matsuuka, K [Contributor]; Mazurek, P [Contributor]; Meinel, K [Contributor]; Michalke, W [Contributor]; Michel, B [Contributor]; Mitra, G. B [Contributor]; Mizuguchi, Y [Contributor]; Mobi, H [Contributor]; Mokrani, R [Contributor]; Mäder, M [Contributor]; Möllmann, K. -P [Contributor]; Nghi, N. T [Contributor]; Opyrchal, H [Contributor]; Ortiz, C [Contributor]; Pan, Guoqing [Contributor]; Petrenko, V. F [Contributor]; Pichet, J [Contributor]; Placencia, I [Contributor]; Postnikov, V. S [Contributor]; Radautsan, S. I [Contributor]; Rajagopal, P [Contributor]; Rodríguez, V. D [Contributor]; Romeo, N [Contributor]; Rzewuski, H [Contributor]; Sadlowski, L [Contributor]; Schmidt, G [Contributor]; Scibior, H [Contributor]; Sekar, G [Contributor]; Shlyk, Yu. K [Contributor]; Shulga, L. I [Contributor]; Siianina, B. D [Contributor]; Siminel, A. V [Contributor]; Strumban, E. E [Contributor]; Subotowicz, M [Contributor]; Suñé, J [Contributor]; Swierczek, J [Contributor]; Sysoev, B. I [Contributor]; Szymuba, S [Contributor]; Tao, Ye [Contributor]; Tempel, A [Contributor]; Tsukumi, I [Contributor]; Tuan, D. A [Contributor]; Unkroth, A [Contributor]; Vacquier, G [Contributor]; Vedeshwar, A. G [Contributor]; Walczak, J [Contributor]; Wang, Xiao-Gang [Contributor]; Yassin, F [Contributor]; Yudin, S. G [Contributor]; Zaretskii, A. V [Contributor]; Zehe, A [Contributor]; Zhang, Hong [Contributor]; Zhang, Qfrui [Contributor]; Zhou, Xianyi [Contributor]; Zângaro, R [Contributor]

Published: Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe]

Issue: Reprint 2021

Extent: 1 Online-Ressource (364 p)

Language: English

DOI: 10.1515/9783112495605

ISBN: 9783112495605

Identifier:

Keywords: SCIENCE / General

Type of reproduction: [Online-Ausgabe]

Origination:

Footnote: In English
Mode of access: Internet via World Wide Web

Description: Frontmatter -- Contents -- Original Papers -- Defects; nonelectronic transport -- The Protonic Conductivity of Heavily KOH-Doped Ice -- Radiation Enhanced Dislocation Glide Effect on Indentation-Induced Fracture of GaAs Single Crystals -- Implanted Impurity Behaviour in Silicon Subjected to Transient Heating -- "In Situ" Determination of Grain Boundary Migration Rates by Synchrotron White Beam X-Ray Topography -- Thermally Stimulated Relaxation in NaF X-Irradiated at Boom Temperature -- Notes on the Carbon-Associated Deep Level Complex in Irradiated Silicon -- Lattice properties -- In Situ TEM Studies of Para-Ferro Phase Transitions in NaNbO3 -- Direct Observation of α-ß Phase Transition in KNbW2O9 by Transmission Electron Microscopy -- Relations between Anisotropic Defects, Structural Evolution, and van der Waals Bonding in 2H-NbSe2 -- Surfaces, interfaces, thin films; lower-dimensional systems -- Structure and Optical Properties of Mo03 Thin Films Prepared by Chemical Vapor Deposition -- Heterostructures on the Basis of Indium Arsenide with Semi-Insulating A^PBJ1 Compound Layers -- Optical Properties of Amorphous Thin Films of MoO3 Deposited by Vacuum Evaporation -- On the Si-SiO2 Interface Roughness in VLSI-MOS Structures -- Thermal Mismatch Biased Rhombohedral Structure of Strained Epitaxial CaF2 Films on Si(111) -- Preparation of High-Tc Y-Ba-Cu-0 and Bi-Sr-Ca-Cu-0 Thin Films by RF-Magnetron Sputtering -- The Effects of Heat Treatment on the Structural Properties of Amorphous In 0.8 Se 0.7 Films -- Temperature Coefficient of the Strain Coefficient of Electrical Resistivity of Double-Layer Thin Metallic Films -- Determination of Concentration-Dependent Diffusion Coefficients from Thin Film/Substrate Interdiffusion -- Localized electronic states -- Deep Electronic Levels in Carbon-Implanted Silicon -- Electrical and Paramagnetic Properties of Thermodonors-II in Silicon -- Electronic transport; superconductivity -- Electrical and Optical Properties of Natural Iron Pyrite (FeS2) -- Magnetic properties; resonances -- Temperature Dependence of Magnetization in Amorphous Co-Fe-Si-B Alloys -- On the Effect of Al Addition on the Phase Composition and Magnetic Properties of Nd-Fe-B Permanent Magnet Alloys -- A Study of Induced Magnetic Anisotropy in Gallium-Iron Ferrites above Room Temperature -- Magnetic Structure of the Orthosilicates Mn2SiO4 and Co2SiO4 -- Dielectric and optical properties -- Influence of Ion Implantation on the Luminescence of GaAs -- Influence of Temperature on the Aggregation Processes of the NaCl:Eu 2+ System -- Effective Temperature of Polarization in Measurements of Thermally Stimulated Depolarization Currents -- Temperature Dependence of the 2.5 eY Emission Band in Se-Treated ZnSe Crystals -- Unified Theoretical Description of EBIC, LBIC, CL, and PL Experiments -- IR and Polarized Raman Spectra of (NH4)2Mg(SO4)2· 6 H2O -- Short Notes -- On the Structure of the Cg Cubic Modification of Carbon -- Variation of the Polarisation Ratio with Different Diffraction Parameters -- Second Order Moiré Analysis -- On Pore Formation in Thin Film/Substrate Interdiffusion at Low Temperatures -- Zn 0.15 Cd 0.85 S Thin Films by RF Sputtering in an Ar-H2 Atmosphere -- A Surface Effect in CaSO4:Mn/PVDF Mixtures -- Defects in GaP Green Light-Emitting Diodes -- Additional Deep Level in Strongly Indium-Doped Lead Tin Telluride -- Effect of the Electrode on the Electrical Conduction Process in Organic Semiconductors -- Positron Trapping in YBa2Cu3Ox Superconductors -- Positron Annihilation in Thermally Quenched YBa2Cu3O 7-x -- The Magnetic Resonance of Fe2V 4-x MoxO13 Type Phase -- Hysteresis Loops of Fine Particle Magnets of the Type NdFeB -- Coercivity of Ion Implanted Cobalt Films -- On the Influence of a Buffer Layer on the Emissive Properties of Epitaxial Layers in InGaAsP (λ = 1.1'. μm) -- Pre-Printed Titles

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Physica status solidi - [Reprint 2021]

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