Description:
Recently, semiconductor-based photocatalysis has been witnessed as an alternative technology for many frontier fields. Among the plenty of heterostructures, constructing type II heterojunctions with two or more semiconductors are deemed as efficient strategy for realizing the directional transfer of photo charge and improving the photocatalytic performance. However, intensive recombination of charge will still occur in case of an untight interface constructed by a rough assemble route. Herein, we have synthesized porous g-C3N4 according to an acid etching method, subsequently, a series of type II heterojunctions which possess tight and extensive contacts are facilely constructed by discretely decorating BiVO4 on the surface of porous g-C3N4, afterwards, it is furtherly certified as an efficient strategy by a series of photoredox performances. Moreover, abundant and unambiguous PEC investigations including photocurrent transient dynamics, electron lifetime, and applied bias photo-to-current efficiency are employed to directly observe the migration and motion behaviors of charge, the results demonstrate that such discrete decoration is more beneficial for prolonging the lifetime and avoiding the intensive spontaneous recombination of photo-generated charge than other counterparts, besides, the migration and motion will be significantly improved. The results reveal that a tight and extensive contact between semiconductors will remarkably boost the photoredox performances