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Media type:
E-Book
Title:
Room Temperature D0 Ferromagnetism, Band-Gap Reduction, and High Optical Transparency in P-Type K-Doped Zno Compounds for Spintronics Applications
Description:
Recently, researchers have focused their attention on [[EQUATION]] ferromagnetism in semiconducting oxide materials incorporated with non-magnetic elements because of their plausible application in spintronic devices. The present work emphases on the structural, micro-structural, elemental, magnetic, optical, and electrical transport properties of Zn 1-x K x O (x=0, 0.03, 0.06, 0.09, and 0.12) compounds prepared by the solid-state route at equilibrium. Crystal structure study by the X-ray diffraction (XRD) patterns analysis reveals the single phase of ZnO hexagonal wurtzite structure with the P6 3 mc space group of these compounds. The estimation of the cell parameters using Rietveld refinement analysis of the XRD patterns indicates that there are minor changes in the cell parameters. The SEM (Scanning Electron Microscopy) microstructure analysis shows the spherical particles of size 3-6 µm. From the field dependence of magnetization (M-H) at room temperature, it is found that K-doped samples exhibit M-H hysteresis loops similar to ferromagnetic material with coercivity in the range of 80-140 Oe. These compounds exhibit maximum saturation magnetization of 0.04 µ B per K-ion for 6% K-doped compound. The UV–Vis absorption data reveal that the optical band gap values of the prepared compounds are reduced as the K concentration increased. The value of transmittance was observed to enhance from 87% (for ZnO) to 92% (for 9% K-doped ZnO) sample. The Hall effect study reveals that all K-doped ZnO samples exhibit p-type nature and the carrier density (hole) increase with the increase in K concentration