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Lu, Xiao ling [Author]; Guo, Xiao bin [Author]; Su, Feng chao [Author]; Qiu, Wen hai [Author]; Su, Zheng [Author]; Li, Jun [Author]; Li, Wen hua [Author]; Jiang, Yan ping [Author]; Tang, Zhen hua [Author]; Liu, Qiu xiang [Author]; Tang, Xin gui [Author]

Photoelectric Characteristics of Al-Doped Zno/P-Si Diode Prepared by Radio Frequency Magnetron Sputtering

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  • Media type: E-Book
  • Title: Photoelectric Characteristics of Al-Doped Zno/P-Si Diode Prepared by Radio Frequency Magnetron Sputtering
  • Contributor: Lu, Xiao ling [Author]; Guo, Xiao bin [Author]; Su, Feng chao [Author]; Qiu, Wen hai [Author]; Su, Zheng [Author]; Li, Jun [Author]; Li, Wen hua [Author]; Jiang, Yan ping [Author]; Tang, Zhen hua [Author]; Liu, Qiu xiang [Author]; Tang, Xin gui [Author]
  • Published: [S.l.]: SSRN, [2022]
  • Extent: 1 Online-Ressource (16 p)
  • Language: English
  • DOI: 10.2139/ssrn.4013505
  • Identifier:
  • Origination:
  • Footnote:
  • Description: Al-doped ZnO (AZO) thin films were deposited on p-type silicon (p-Si) substrates by radio frequency magnetron sputtering technology. Crystal structure, morphology characterization and elemental analysis demonstrate that AZO film grows along the c-axis (002) orientation without other impurities. The current-voltage and current-time characteristics under different illumination conditions reveal the Au/AZO/p-Si diode has the typical rectification behavior, excellent stability and repeatability. We found that the photocurrent is proportional to the intensity of ultraviolet irradiation, and the photocurrent reaches 110 μA at a bias voltage of 5 V under 11.75 mW/cm 2 ultraviolet light irradiation. By calculating the conduction band and valence band offset values of AZO/p-Si heterojunction, the energy band diagrams at different states are constructed to explain the photoelectric response behavior. These results will be helpful for the design of high-performance photodiodes
  • Access State: Open Access