Description:
Non-stoichiometric ratio Bi 1.5 Zn 1.0+x Nb 1.5 O 7.0+x (BZN-xZnO, -0.15≤x≤0.05) thin films were prepared on FTO glass substrate by sol-gel method. The crystal structures and morphologies were analyzed by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The changes of elemental chemical states under different zinc contents were analyzed by XPS. XRD results show that all the prepared thin films have crystallized. When x= -0.1, the thin film has the highest crystallinity. SEM results display that the prepared films have good uniformity and no defects. XPS results indicate that more Zn-O bonds are formed with the increase of zinc content. The measured dielectric properties show that the thin film with x = -0.1 has maximum tunability of 12.4%, the lowest loss tangent of 0.0089 and the highest energy storage density of 0.594 J/cm 3 . Comprehensive analysis shows that BZN thin film has the best performance when x = -0.1