• Media type: Text; E-Article
  • Title: Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier
  • Contributor: Chichkov, Nikolai B. [Author]; Yadav, Amit [Author]; Joulain, Franck [Author]; Cozic, Solenn [Author]; Smirnov, Semyon V. [Author]; Shterengas, Leon [Author]; Scheuermann, Julian [Author]; Weih, Robert [Author]; Koeth, Johannes [Author]; Hofling, Sven [Author]; Hinze, Ulf [Author]; Poulain, Samuel [Author]; Rafailov, Edik U. [Author]
  • Published: New York, NY : IEEE, 2023
  • Published in: IEEE Photonics Journal 15 (2023), Nr. 1 ; IEEE Photonics Journal
  • Issue: published Version
  • Language: English
  • DOI: https://doi.org/10.15488/16167; https://doi.org/10.1109/jphot.2023.3238078
  • Keywords: semiconductor laser ; gaSb diode laser ; fibre laser ; fluoride fibre ; nanosecond ; Erbium ; ZBLAN ; mid-infrared
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  • Description: Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 μm. The laser setup consists of a GaSb-based diode laser and a single-stage Er-doped fibre amplifier. Amplification is investigated for continuous wave (CW) and ns-pulsed input signals, generated by gain-modulation of the GaSb-based seed lasers. The experimental results include the demonstration of output powers up to 0.9 W, pulse durations as short as 20 ns, and pulse repetition rates up to 1 MHz. Additionally, the amplification of commercial and custom-made GaSb-based seed lasers is compared and the impact of different fibre end-cap materials on laser performance is analysed.
  • Access State: Open Access