Media type: Text; E-Article Title: Interplay of Electron and Nuclear Spin Noise in n -Type GaAs Contributor: Berski, Fabian [Author]; Hübner, Jens [Author]; Oestreich, Michael [Author]; Ludwig, Arne [Author]; Wieck, A.D. [Author]; Glazov, Mikhail [Author] imprint: College Park, MD : American Physical Society, 2015 Published in: Physical Review Letters 115 (2015), Nr. 17 Issue: published Version Language: English DOI: https://doi.org/10.15488/2072; https://doi.org/10.1103/PhysRevLett.115.176601 Keywords: Electrospinning ; Electrons ; Magnetic fields ; Semiconductor systems ; Very low frequency ; Electron spin precession ; Spin noise spectroscopy ; Spin dynamics ; Orders of magnitude ; Spin fluctuations ; Semiconducting gallium ; Donor-bound exciton ; Low magnetic fields ; Magnetic moments ; Gallium arsenide ; External magnetic field Origination: Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen. Description: We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over 6 orders of magnitude from milliseconds to nanoseconds. The spin-noise spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V-based semiconductor systems. The experiment distinctly reveals the finite Overhauser shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies, features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear spin noise. © 2015 American Physical Society. Access State: Open Access