Media type: Text; E-Article Title: Bimodal counting statistics in single-electron tunneling through a quantum dot Contributor: Fricke, Christian [Author]; Hohls, Frank [Author]; Wegscheider, W. [Author]; Haug, Rolf J. [Author] Published: College Park, MD : American Physical Society, 2007 Published in: Physical Review B 76 (2007), Nr. 15 Issue: published Version Language: English DOI: https://doi.org/10.15488/2860; https://doi.org/10.1103/PhysRevB.76.155307 Keywords: QPC ; quantum dots ; single-electron tunneling Origination: Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen. Description: We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain voltages for several consecutive electron numbers on the quantum dot. For certain configurations, we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts, we relate this to a slow switching between different electron configurations on the quantum dot. © 2007 The American Physical Society. Access State: Open Access