Media type: Text; E-Article Title: Giant anisotropy of zeeman splitting of quantum confined acceptors in Si/Ge Contributor: Haendel, K.-M. [Author]; Winkler, R. [Author]; Denker, U. [Author]; Schmidt, O.G. [Author]; Haug, Rolf J. [Author] Published: College Park, MD : American Physical Society, 2006 Published in: Physical Review Letters 96 (2006), Nr. 8 Issue: published Version Language: English DOI: https://doi.org/10.15488/2895; https://doi.org/10.1103/PhysRevLett.96.086403 Keywords: Semiconducting silicon ; Giant anisotropy ; Electron tunneling ; Heterojunctions ; Semiconducting germanium ; Spectroscopic analysis ; Biaxial strain ; Magnetic anisotropy ; Resonance ; Semiconductor quantum wells ; Resonant-tunneling spectroscopy ; Zeeman splitting ; Magnetic fields Origination: Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen. Description: Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the acceptor levels. In an in-plane field, on the other hand, the Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is shown to be a consequence of the huge light-hole-heavy-hole splitting caused by a large biaxial strain and a strong quantum confinement in the Ge quantum well. © 2006 The American Physical Society. Access State: Open Access