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Langmach, Hartmut [Author]; Nürnberg, Reiner [Author]; Kaiser, Hans-Christoph [Author]; Richter, Rainer H. [Author]; Gajewski, Herbert [Author]

Mathematical Modelling and Numerical Simulation of Semiconductor Detectors

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  • Media type: E-Article; Text
  • Title: Mathematical Modelling and Numerical Simulation of Semiconductor Detectors
  • Contributor: Langmach, Hartmut [Author]; Nürnberg, Reiner [Author]; Kaiser, Hans-Christoph [Author]; Richter, Rainer H. [Author]; Gajewski, Herbert [Author]
  • imprint: Weierstrass Institute for Applied Analysis and Stochastics publication server, 2003
  • Language: English
  • DOI: https://doi.org/10.1007/978-3-642-55753-8_29
  • Keywords: semiconductor device simulation -- reaction-diffusion systems -- asymptotic behavior -- time and 3d-space discretization -- software design -- x-ray pixel detector -- DEPFET -- DEPMOS ; article
  • Origination:
  • Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
  • Description: We report on a system of nonlinear partial differential equations describing signal conversion and amplification in semiconductor detectors. We explain the main ideas governing the numerical treatment of this system as they are implemented in our code WIAS-TeSCA. This software package has been used by the MPI Semiconductor Laboratory for numerical simulation of innovative radiation detectors. We present some simulation results focussing on three-dimensional effects in X-ray detectors for satellite missions.