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Herrero, Ramon [Author]; Staliunas, Kestutis [Author]; Botey, Muriel [Author]; Radziunas, Mindaugas [Author]

Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers

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  • Media type: Text; E-Article
  • Title: Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers
  • Contributor: Herrero, Ramon [Author]; Staliunas, Kestutis [Author]; Botey, Muriel [Author]; Radziunas, Mindaugas [Author]
  • Published: Weierstrass Institute for Applied Analysis and Stochastics publication server, 2015
  • Language: English
  • DOI: https://doi.org/10.1364/josab.32.000993
  • Keywords: article ; semiconductor amplifier -- traveling wave model -- coupled mode approach -- periodic structure -- anisotropy -- far field -- spatial filtering
  • Origination:
  • Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
  • Description: We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component.