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Shen, W. [Author]; Dittmann, R. [Author]; Breuer, U. [Author]; Waser, R. [Author]

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

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  • Media type: E-Article
  • Title: Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode
  • Contributor: Shen, W. [Author]; Dittmann, R. [Author]; Breuer, U. [Author]; Waser, R. [Author]
  • imprint: American Institute of Physics, 2008
  • Published in: Applied physics letters 93, 222102-1 (2008). doi:10.1063/1.3039809
  • Language: English
  • DOI: https://doi.org/10.1063/1.3039809
  • ISSN: 0003-6951
  • Keywords: reduction (chemical) ; semiconductor materials ; strontium compounds ; electrical resistivity ; oxidation ; semiconductor-metal boundaries ; tungsten ; time of flight mass spectra ; electrodes ; ferroelectric semiconductors ; secondary ion mass spectra ; platinum ; semiconductor thin films ; electrical conductivity transitions ; barium compounds
  • Origination:
  • Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
  • Description: We compared the resistive switching performance of barium strontium titanate (BST) thin films with tungsten (W) and platinum (Pt) top electrodes, respectively. The yield, endurance, and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop in the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10(4) times without any obvious degradation. We attribute the improved switching performance to a reversible oxidation and reduction in a WOx layer at the W-BST interface, which was detected by time-of-flight secondary-ion-mass spectroscopy measurements.
  • Access State: Open Access