• Media type: E-Article
  • Title: Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films
  • Contributor: Maryško, M. [Author]; Hejtmánek, J. [Author]; Malínský, P. [Author]; Wilhelm, R. A. [Author]; Laguta, V. [Author]; Sofer, Z. [Author]; Sedmidubský, D. [Author]; Šimek, P. [Author]; Veselý, M. [Author]; Mikulics, M. [Author]; Buchal, C. [Author]; Macková, A. [Author]
  • imprint: American Inst. of Physics, 2015
  • Published in: Journal of applied physics 117(17), 17B907 (2015). doi:10.1063/1.4916761
  • Language: English
  • DOI: https://doi.org/10.1063/1.4916761
  • ISSN: 0148-6349; 1089-7550; 0021-8979
  • Origination:
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  • Description: The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.
  • Access State: Open Access