Flöhr, Kilian
[Author];
Sladek, Kamil
[Author];
Gunel, Yusuf
[Author];
Lepsa, Mihail Ion
[Author];
Hardtdegen, Hilde
[Author];
Liebmann, Marcus
[Author];
Schäpers, Thomas
[Author];
Morgenstern, Markus
[Author]
Scanning tunneling microscopy with InAs nanowire tips
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Media type:
E-Article
Title:
Scanning tunneling microscopy with InAs nanowire tips
Contributor:
Flöhr, Kilian
[Author];
Sladek, Kamil
[Author];
Gunel, Yusuf
[Author];
Lepsa, Mihail Ion
[Author];
Hardtdegen, Hilde
[Author];
Liebmann, Marcus
[Author];
Schäpers, Thomas
[Author];
Morgenstern, Markus
[Author]
imprint:
American Institute of Physics, 2012
Published in:Applied physics letters 101(24), 243101 - (2012). doi:10.1063/1.4769450
Language:
English
DOI:
https://doi.org/10.1063/1.4769450
ISSN:
1077-3118;
0003-6951
Origination:
Footnote:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Description:
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.