Holý, V.
[Author];
Stangl, J.
[Author];
Fromherz, T.
[Author];
Lechner, R.T.
[Author];
Wintersberger, E.
[Author];
Bauer, G.
[Author];
Dais, C.
[Author];
Müller, E.
[Author];
Grützmacher, D.
[Author]
X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal
You can manage bookmarks using lists, please log in to your user account for this.
Media type:
E-Article
Title:
X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal
Contributor:
Holý, V.
[Author];
Stangl, J.
[Author];
Fromherz, T.
[Author];
Lechner, R.T.
[Author];
Wintersberger, E.
[Author];
Bauer, G.
[Author];
Dais, C.
[Author];
Müller, E.
[Author];
Grützmacher, D.
[Author]
Published:
APS, 2009
Published in:Physical review / B 79, 035324 (2009). doi:10.1103/PhysRevB.79035324
Footnote:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Description:
High-resolution x-ray diffraction was employed to study the structural properties of a three-dimensional periodic arrangement of SiGe quantum dots in a Si matrix. Using extreme ultraviolet lithography at a synchrotron source a two-dimensional array of pits (period 90x100 nm(2)) was defined and transferred into a (001) Si wafer by reactive ion etching. By molecular-beam epitaxy SiGe islands of about 30 nm diameter and 3 nm height were grown into the pits. Subsequent deposition of Si spacer layers of 10 nm thickness and SiGe island layers results in a three-dimensionally periodic arrangement of quantum dots, mediated by the strain fields of the buried dots. Their so far unmatched structural perfection is assessed by coplanar x-ray diffractometry using synchrotron radiation. Reciprocal-space maps around the (004) and (224) reciprocal-lattice maps were recorded and analyzed to get quantitative information on the disorder of the dot positions and to obtain the mean Ge content of the dots. In addition, information on the strain fields was deduced from the analysis of the diffraction data. Together with atomic force microscopy data on the island shape and size distribution, a complete structural characterization is achieved.