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Chen, P. [Author]; Chu, P. K. [Author]; Caymax, M. [Author]; Cai, M. [Author]; Lau, S. S. [Author]; Höchbauer, T. [Author]; Nastasi, M. [Author]; Buca, D. [Author]; Mantl, S. [Author]; Theodore, N. D. [Author]; Alford, T. L. [Author]; Mayer, J. W. [Author]; Loo, R. [Author]

Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

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  • Media type: E-Article
  • Title: Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer
  • Contributor: Chen, P. [Author]; Chu, P. K. [Author]; Caymax, M. [Author]; Cai, M. [Author]; Lau, S. S. [Author]; Höchbauer, T. [Author]; Nastasi, M. [Author]; Buca, D. [Author]; Mantl, S. [Author]; Theodore, N. D. [Author]; Alford, T. L. [Author]; Mayer, J. W. [Author]; Loo, R. [Author]
  • imprint: American Institute of Physics, 2004
  • Published in: Applied physics letters 85, 4944 - 4946 (2004). doi:10.1063/1.1824171
  • Language: English
  • DOI: https://doi.org/10.1063/1.1824171
  • ISSN: 0003-6951
  • Keywords:
  • Origination:
  • Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
  • Description: The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that the interface of a strain-relaxed SiGe/Si heterostructure is effective in trapping H during plasma hydrogenation. Long microcracks observed at the interface due to the trapping of indiffused H indicate the distinct possibility of transferring the overlayer using the ion-cutting technique. Our results suggest that interfacial defects induced by the He implantation relaxation process trap the indiffusing H atoms and lead to interfacial cracks during hydrogenation or upon postannealing at higher temperatures. It is further noted that trapping of H at the interface is possible only in strain-relaxed structures. Without strain relaxation, H atoms introduced by plasma hydrogenation get trapped just below the sample surface and form a band of shallow platelets. Without the need for high-dose high-energy ion implantation, our results suggest an effective way for high-quality strain-relaxed SiGe layer transfer. The technique has potential for application in the fabrication of SiGe-on-insulator strained Si epitaxial layer and related structures. (C) 2004 American Institute Of Physics.
  • Access State: Open Access