Mikulics, M.
[Author];
Michael, E. A.
[Author];
Schieder, R.
[Author];
Stutzki, J.
[Author];
Marso, M.
[Author];
von der Hart, A.
[Author];
Bochem, H. P.
[Author];
Lüth, H.
[Author];
Kordos, P.
[Author]
Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
You can manage bookmarks using lists, please log in to your user account for this.
Media type:
E-Article
Title:
Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
Contributor:
Mikulics, M.
[Author];
Michael, E. A.
[Author];
Schieder, R.
[Author];
Stutzki, J.
[Author];
Marso, M.
[Author];
von der Hart, A.
[Author];
Bochem, H. P.
[Author];
Lüth, H.
[Author];
Kordos, P.
[Author]
imprint:
American Institute of Physics, 2006
Published in:Applied physics letters 88, 041118 (2006). doi:10.1063/1.2168250
Language:
English
DOI:
https://doi.org/10.1063/1.2168250
ISSN:
0003-6951
Keywords:
Origination:
Footnote:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Description:
We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal (MSM) contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted in an up-to-100% increase in the output power of continuously operated devices, compared to conventional MSM devices with standard surface electrodes fabricated on an identical material. The recessed electrode structure also resulted in lower saturation of output power at higher input powers, enabling it to take advantage of higher input powers. (c) 2006 American Institute of Physics.