Stoffers, Andreas
[Author];
Barthel, Juri
[Author];
Liebscher, Christian H.
[Author];
Gault, Baptiste
[Author];
Cojocaru-Mirédin, Oana
[Author];
Scheu, Christina
[Author];
Raabe, Dierk
[Author]
Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries
You can manage bookmarks using lists, please log in to your user account for this.
Media type:
E-Article
Title:
Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries
Contributor:
Stoffers, Andreas
[Author];
Barthel, Juri
[Author];
Liebscher, Christian H.
[Author];
Gault, Baptiste
[Author];
Cojocaru-Mirédin, Oana
[Author];
Scheu, Christina
[Author];
Raabe, Dierk
[Author]
Published:
Cambridge University Press, 2017
Published in:Microscopy and microanalysis 23(02), 291 - 299 (2017). doi:10.1017/S1431927617000034
Language:
English
DOI:
https://doi.org/10.1017/S1431927617000034
ISSN:
1435-8115;
1431-9276
Origination:
Footnote:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Description:
In the course of a thorough investigation of the performance-structure-chemistry interdependency at silicon grain boundaries, we successfully developed a method to systematically correlate aberration-corrected scanning transmission electron microscopy and atom probe tomography. The correlative approach is conducted on individual APT and TEM specimens, with the option to perform both investigations on the same specimen in the future. In the present case of a Σ9 grain boundary, joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.