• Media type: E-Article
  • Title: Unveiling Valley Lifetimes of Free Charge Carriers in Monolayer WSe 2
  • Contributor: Ersfeld, Manfred [Author]; Volmer, Frank [Author]; Shi, Jing [Author]; Stampfer, Christoph [Author]; Beschoten, Bernd [Author]; Rathmann, Lars [Author]; Kotewitz, Luca [Author]; Heithoff, Maximilian [Author]; Lohmann, Mark [Author]; Yang, Bowen [Author]; Watanabe, Kenji [Author]; Taniguchi, Takashi [Author]; Bartels, Ludwig [Author]
  • Published: ACS Publ., 2020
  • Published in: Nano letters 20(5), 3147 - 3154 (2020). doi:10.1021/acs.nanolett.9b05138
  • Language: English
  • DOI: https://doi.org/10.1021/acs.nanolett.9b05138
  • ISSN: 1530-6992; 1530-6984
  • Origination:
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  • Description: We report on nanosecond-long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe2, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarization increases when tuning the Fermi level into the conduction or valence band, there is a strong decrease of the respective valley lifetime consistent with both electron-phonon and spin-orbit scattering. The longest lifetimes are seen for spin-polarized bound excitons in the band gap region. We explain our findings via two distinct, Fermi-level-dependent scattering channels of optically excited, valley-polarized bright trions either via dark or bound states. By electrostatic gating we demonstrate that the transition-metal dichalcogenide WSe2 can be tuned to be either an ideal host for long-lived localized spin states or allow for nanosecond valley lifetimes of free charge carriers (>10 ns).
  • Access State: Open Access