Richard, M.-I.
[Author];
Malachias, A.
[Author];
Stoffel, M.
[Author];
Merdzhanova, T.
[Author];
Schmidt, O. G.
[Author];
Renaud, G.
[Author];
Metzger, T. H.
[Author];
Schülli, T. U.
[Author]
Temperature evolution of defects and atomic ordering in Si$_{1−x}$Ge$_{x}$ islands on Si(001)
You can manage bookmarks using lists, please log in to your user account for this.
Media type:
E-Article
Title:
Temperature evolution of defects and atomic ordering in Si$_{1−x}$Ge$_{x}$ islands on Si(001)
Contributor:
Richard, M.-I.
[Author];
Malachias, A.
[Author];
Stoffel, M.
[Author];
Merdzhanova, T.
[Author];
Schmidt, O. G.
[Author];
Renaud, G.
[Author];
Metzger, T. H.
[Author];
Schülli, T. U.
[Author]
Published:
American Inst. of Physics, 2016
Published in:Journal of applied physics 119(8), 085704 - (2016). doi:10.1063/1.4942530
Language:
English
DOI:
https://doi.org/10.1063/1.4942530
ISSN:
0148-6349;
1089-7550;
0021-8979
Origination:
Footnote:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Description:
The observation of atomic ordering and signatures of defects in self-assembled Ge islands using x-ray diffraction techniques have been previously treated as unrelated subjects. However, mutual understanding can be achieved when both subjects are studied in a common frame. Here, we report on measurements and analysis of both defects and atomic ordering in Si1−xGex islands epitaxially grown on Si(001) substrates as a function of growth temperature. By using x-ray diffraction and mapping around a bulk forbidden reflection, defect sizes, and in-plane spacing between nearby dislocations are extracted and related to the composition of the islands. The results fit well with an independent determination using selective wet chemical etching and atomic force microscopy measurements. Moreover, the temperature dependence of the ordered domain size is discussed. Although both atomic ordering and defect formation take place independently in the system, it is found that the relaxation provided by the onset of defects does not affect the formation of ordered domains, recently pointed out to be stabilized by strain and surface equilibrium on islands facets