Published in:Jülich : Kernforschungsanlage Jülich, Verlag, Berichte der Kernforschungsanlage Jülich 107, p. 3078-80 (1963).
Language:
English
Origination:
Footnote:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Description:
In hexagonal networks in the (111) plane of silicon both families of nodes are "extended." This implies that intrinsic as well as extrinsic slacking faults have small energy. The two stacking fault energies are $\thicksim$50 ergs/cm$^{2}$ and $\thicksim$60 ergs/cm$^{2}$. lt is not possible at present lo decide which energy belongs to which stacking fault. Both the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.