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Waechtler, Thomas [Author]; Schulze, Steffen [Author]; Hofmann, Lutz [Author]; Hermann, Sascha [Author]; Roth, Nina [Author]; Schulz, Stefan E. [Author]; Gessner, Thomas [Author]; Lang, Heinrich [Author]; Hietschold, Michael [Author]

Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru

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  • Media type: Lecture
  • Title: Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru
  • Contributor: Waechtler, Thomas [Author]; Schulze, Steffen [Author]; Hofmann, Lutz [Author]; Hermann, Sascha [Author]; Roth, Nina [Author]; Schulz, Stefan E. [Author]; Gessner, Thomas [Author]; Lang, Heinrich [Author]; Hietschold, Michael [Author]
  • imprint: Chemnitz: Technische Universität Chemnitz, [2009]
    Chemnitz: Fraunhofer ENAS, [2009]
    Chemnitz: American Vacuum Society (AVS), [2009]
  • Language: English
  • Keywords: Verkupferung ; Thin film ; Kupfer ; Ruthenium ; Atomic Layer Deposition (ALD) ; Siliciumdioxid ; Metallization ; Galvanische Abscheidung ; Tantalum nitride ; Copper oxide ; Reduktion <Chemie> ; Kupferoxide ; Metallisierungsschicht ; Electroplating ; Ellipsometry ; Dielektrische Funktion ; Copper ; Dielectric function ; Tantalnitride ; Reduction ; Dünne Schicht ; ULSI ; Silicon oxide ; Ellipsometrie
  • Origination:
  • Footnote: Quelle: AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), Monterey, CA (USA), July 19-22, 2009
  • Description: Copper films with a thickness in the nanometerrange are required as seed layers for theelectrochemical Cu deposition to form multilevelinterconnects in ultralarge-scaleintegrated (ULSI) electronic devices.Continuously shrinking device dimensions andincreasing aspect ratios of the dual-damascenestructures in the copper-based metallizationschemes put ever more stringent requirements onthe films with respect to their conformality innanostructures and thickness homogeneity acrosslarge wafers. Due to its intrinsic self-limiting film growth characteristic, atomic layerdeposition (ALD) appears appropriate forhomogeneously coating complex substrates and to replace conventional physical vapor deposition(PVD) methods beyond the 32 nm technology node. To overcome issues of direct Cu ALD, such asfilm agglomeration at higher temperatures or reduced step coverage in plasma-based processes, anALD copper oxide film may be grown under mild processing conditions, while a subsequent reductionstep converts it to metallic copper. In this poster, which was presented at the AVS 9thInternational Conference on Atomic Layer Deposition (ALD 2009), held in Monterey, California from19 to 22 July 2009, we report detailed film growth studies of ALD copperoxide in the self-limiting regime on SiO2, TaN and Ru. Applications in subsequentelectrochemical deposition processes are discussed, comparing Cu plating results on as-depositedPVD Ru as well as with PVD and reduced ALD Cu seed layer.