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Gebel, Thoralf [Author]

Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties

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  • Media type: E-Book; Report
  • Title: Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties
  • Contributor: Gebel, Thoralf [Author]
  • imprint: Dresden : Forschungszentrum Rossendorf, [2010]
  • Published in: Wissenschaftlich-technische Berichte ; FZR-350
  • Language: English
  • Keywords: RBS ; photoluminescence ; EL ; endurance ; IV ; defect luminescence ; CV ; Fowler-Nordheim ; electroluminescence ; non-volatile memory ; silicon dioxide ; nanocluster ; PL ; TEM ; retention ; SiO2 ; charge trapping
  • Origination:
  • Footnote: Quelle: Wissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-350 Juli 2002
  • Description: The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.
  • Access State: Open Access