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Tang, Tianyu [Author]; Dacha, Preetam [Author]; Haase, Katherina [Author]; Kreß, Joshua [Author]; Hänisch, Christian [Author]; Perez, Jonathan [Author]; Krupskaya, Yulia [Author]; Tahn, Alexander [Author]; Pohl, Darius [Author]; Schneider, Sebastian [Author]; Talnack, Felix [Author]; Hambsch, Mike [Author]; Reineke, Sebastian [Author]; Vaynzof, Yana [Author]; Mannsfeld, Stefan C. B. [Author]

Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process

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  • Media type: E-Article
  • Title: Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process
  • Contributor: Tang, Tianyu [Author]; Dacha, Preetam [Author]; Haase, Katherina [Author]; Kreß, Joshua [Author]; Hänisch, Christian [Author]; Perez, Jonathan [Author]; Krupskaya, Yulia [Author]; Tahn, Alexander [Author]; Pohl, Darius [Author]; Schneider, Sebastian [Author]; Talnack, Felix [Author]; Hambsch, Mike [Author]; Reineke, Sebastian [Author]; Vaynzof, Yana [Author]; Mannsfeld, Stefan C. B. [Author]
  • imprint: Weinheim : Wiley-VCH, [2024]
  • Language: English
  • DOI: 10.1002/adfm.202207966
  • Keywords: Metal oxide ; semiconductor layers ; elektronische Bauelemente ; elektrische Leistung ; Technik ; electrical performance ; Metalloxid ; technology ; Halbleiterschichten ; electronic devices
  • Origination:
  • Footnote: Hinweis: Link zum Artikel der zuerst in der Zeitschrift „Advanced functional materials” bei Wiley erschienen ist. DOI: 10.1002/adfm.202207966
  • Description: Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2 V−1 s−1, respectively. The devices show an excellent on/off ratio (>106), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2 V−1 s−1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2 V−1 s−1) and IZI-TFTs (over 38 cm2 V−1 s−1) using MO semiconductor layers annealed at 300 °C are achieved.
  • Access State: Open Access
  • Rights information: Attribution - Non Commercial - No Derivs (CC BY-NC-ND)