Description:
We present a strategy for quantitative spectroscopic analysis of packaging-induced strain using both finite element analysis and band-structure calculations. This approach holds for a wide class of AlGaAs-based, and related, devices, among them high-power “cm-bars.” The influence on the results of particular device structure properties, such as intrinsic strain and quantum-well geometry, is analyzed. We compare theoretical results based on a unaxial stress model with photocurrent data obtained from an externally strained cm-bar, and obtain better agreement than from alternative strain models. The general approach is also applicable to the analysis of all data that refer to changes of the electronic band structure, such as absorption and photoluminescence.