Description:
<jats:p>We have shown the feasibility of forming insulating walls in Ga1−xAlxAs by proton bombardment, and have demonstrated their stability up to a temperature of 180°C. The mean projected range of protons in Ga1−xAlxAs is determined for energies ranging from 200 to 1200 keV. The insulating properties of proton-bombarded layers are applied to the realization of cross-bar integrated arrays of electroluminescent diodes.</jats:p>