Description:
<jats:p>We report highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 μm, grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By optimizing the InAs growth rate and capping the QDs with GaAs using triethylgallium as a gallium source, we have achieved a narrow photoluminescence (PL) inhomogeneous linewidth of 16.5 meV (at 7 K) from QDs with a density of 1.7×1010 cm−2. Furthermore, we show by temperature-dependent PL measurements that the QDs exhibit almost no dependence of linewidth on temperature due to their high uniformity.</jats:p>