Description:
<jats:p>We propose a “spin capacitor” that could be implemented by modifying a commercial silicon field-effect transistor to incorporate traps in the oxide and ferromagnetic source and drain contacts in an antiparallel spin-valve configuration. A quantitative model is presented suggesting that small values of drain voltage ∼100mV can be used to spin polarize the traps (“charge the spin capacitor”), which can be subsequently detected through its effect on the drain current. Other configurations can be designed to implement the basic idea, which enables convenient manipulation and detection of individual spins through a small applied bias and which may be useful in exploring many novel spintronic phenomena.</jats:p>