Description:
<jats:p>A new computer program enables the evolution of oxygen distributions in separation by implanted oxygen (SIMOX) substrates to be simulated during implantation and also after high-temperature annealing. The positions of the Si/SiO2 interfaces have been calculated for implantation energies of 150 and 200 keV. Theoretical results are in good agreement with experimental data over a wide range of fluences. It is found that the use of multiple implantation and annealing cycles, in comparison with a single implantation stage, shifts the buried oxide layer towards the surface.</jats:p>