Hatami, F.;
Ledentsov, N. N.;
Grundmann, M.;
Böhrer, J.;
Heinrichsdorff, F.;
Beer, M.;
Bimberg, D.;
Ruvimov, S. S.;
Werner, P.;
Gösele, U.;
Heydenreich, J.;
Richter, U.;
Ivanov, S. V.;
Meltser, B. Ya.;
Kop’ev, P. S.;
Alferov, Zh. I.
Radiative recombination in type-II GaSb/GaAs quantum dots
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Media type:
E-Article
Title:
Radiative recombination in type-II GaSb/GaAs quantum dots
Contributor:
Hatami, F.;
Ledentsov, N. N.;
Grundmann, M.;
Böhrer, J.;
Heinrichsdorff, F.;
Beer, M.;
Bimberg, D.;
Ruvimov, S. S.;
Werner, P.;
Gösele, U.;
Heydenreich, J.;
Richter, U.;
Ivanov, S. V.;
Meltser, B. Ya.;
Kop’ev, P. S.;
Alferov, Zh. I.
Published:
AIP Publishing, 1995
Published in:
Applied Physics Letters, 67 (1995) 5, Seite 656-658
Language:
English
DOI:
10.1063/1.115193
ISSN:
0003-6951;
1077-3118
Origination:
Footnote:
Description:
Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a self-organized way on a GaAs(100) surface upon deposition of 1.2 nm GaSb followed by a GaAs cap layer. Plan-view transmission electron microscopy studies reveal well developed rectangular-shaped GaSb islands with a lateral extension of ∼20 nm. Intense photoluminescence (PL) is observed at an energy lower than the GaSb wetting layer luminescence. This line is attributed to radiative recombination of 0D holes located in the GaSb dots and electrons located in the surrounding regions. The GaSb quantum dot PL dominates the spectrum up to high excitation densities and up to room temperature.