• Media type: E-Article
  • Title: Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells
  • Contributor: Ohnesorge, B.; Weigand, R.; Bacher, G.; Forchel, A.; Riedl, W.; Karg, F. H.
  • Published: AIP Publishing, 1998
  • Published in: Applied Physics Letters, 73 (1998) 9, Seite 1224-1226
  • Language: English
  • DOI: 10.1063/1.122134
  • ISSN: 0003-6951; 1077-3118
  • Origination:
  • Footnote:
  • Description: <jats:p>Room-temperature recombination dynamics has been investigated in a large set of different Cu(In,Ga)Se2 absorber films and compared to the electrical device characteristics of the respective solar cell modules. For a given cell preparation process, a characteristic relation between the low-injection minority-carrier lifetime of the absorber layers and the conversion efficiency of the solar cells is observed: Long lifetimes correlate with high open circuit voltages and conversion efficiencies, while no significant influence of the lifetime on the short circuit current is found.</jats:p>