Description:
<jats:p>We demonstrated that ion-implantation damage in gate SiO2-enhanced boron penetration in p-channel metal–oxide–semiconductor devices, easily enhances boron diffusion in SiO2 by ten times or more. This article describes the effectiveness of using high-temperature annealing above 1000 °C on damaged samples to suppress boron penetration in samples damaged by ion implantation. We also performed an electron spin resonance measurement to examine the damage recovery.</jats:p>