Comment on “Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition” [Appl. Phys. Lett. 90, 092108 (2007)]
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Media type:
E-Article
Title:
Comment on “Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition” [Appl. Phys. Lett. 90, 092108 (2007)]
Description:
<jats:p>An absence of shift in X-ray diffraction peaks between fully strained and relaxed GeSi buffers is inconsistent with elasticity theory and demands an explanation.</jats:p>