Description:
<jats:p>We have investigated the dependence of the effective work function (EWF) of a poly-p+∕TiN∕SiO2∕Si capacitor as a function of the TiN layer thickness. By using a pulsing chemical vapor deposition process, the nitride layer was demonstrated to be continuous from 2.2nm. It was also shown that the EWF of capacitors, made with TiN layer thickness ranging between 2.2 and 7.1nm, is independent of the thickness and similar to that of bulk TiN. Our study indicates that the EWF of the entire gate electrode stack is determined by the first metallic monolayers (&lt;2.2nm) in contact with the gate dielectric.</jats:p>