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Guimard, Denis; Nishioka, Masao; Tsukamoto, Shiro; Arakawa, Yasuhiko

High density InAs∕GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition

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  • Media type: E-Article
  • Title: High density InAs∕GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition
  • Contributor: Guimard, Denis; Nishioka, Masao; Tsukamoto, Shiro; Arakawa, Yasuhiko
  • imprint: AIP Publishing, 2006
  • Published in: Applied Physics Letters
  • Language: English
  • DOI: 10.1063/1.2385209
  • ISSN: 1077-3118; 0003-6951
  • Keywords: Physics and Astronomy (miscellaneous)
  • Origination:
  • Footnote:
  • Description: <jats:p>The antimony surfactant-mediated growth of InAs∕GaAs quantum dots (QDs) by metal organic chemical vapor deposition was investigated. The authors show that the growth of InAs QDs on Sb:GaAs(100) can result in both a strong increase of the dot density, up to 1011cm−2, and the suppression of coalescence. They achieved InAs∕Sb:GaAs QDs with density above 4×1010cm−2, ground-state emission above 1.30μm, and enhanced photoluminescence intensity at room temperature compared to that of InAs∕GaAs QDs. Remarkably, InAs∕Sb:GaAs QDs do not exhibit an emission blueshift under annealing at temperatures as high as 630°C, contrary to InAs∕GaAs QDs.</jats:p>