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Lombos, B. A.; Bretagnon, T.; Jean, A.; Le Van Mao, R.; Bourassa, S.; Dodelet, J. P.

EL2 trends in As-rich GaAs grown by close-spaced vapor transport

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  • Media type: E-Article
  • Title: EL2 trends in As-rich GaAs grown by close-spaced vapor transport
  • Contributor: Lombos, B. A.; Bretagnon, T.; Jean, A.; Le Van Mao, R.; Bourassa, S.; Dodelet, J. P.
  • Published: AIP Publishing, 1990
  • Published in: Journal of Applied Physics, 67 (1990) 4, Seite 1879-1883
  • Language: English
  • DOI: 10.1063/1.345617
  • ISSN: 0021-8979; 1089-7550
  • Origination:
  • Footnote:
  • Description: Deep level transient spectroscopy and transport properties measurements were performed on close-spaced vapor transport deposited epitaxial GaAs. The deep EL2 donor level was consistently observed in all of the layers. A side band at around 300 K was found to be present in relatively high concentration close to the as-grown surface of the epitaxial films. The multilevel impurity model treatments suggest the existence of an off-stoichiometry-induced deep acceptor level, related to possible gallium vacancies, in As-rich GaAs.