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Media type:
E-Article
Title:
The effects of deposition rate on the structural and electrical properties of ZnO:Al films deposited on (112̄0) oriented sapphire substrates
Contributor:
Igasaki, Yasuhiro;
Saito, Hiromi
imprint:
AIP Publishing, 1991
Published in:Journal of Applied Physics
Language:
English
DOI:
10.1063/1.349258
ISSN:
0021-8979;
1089-7550
Origination:
Footnote:
Description:
<jats:p>Aluminum doped zinc oxide (ZnO:Al) films were deposited on (112̄0) oriented sapphire substrates heated to 200 °C with a radio-frequency (rf) power ranging from 25 to 170 W for a deposition rate in the range 0.7–27.4 nm min−1 by rf-magnetron sputtering from a ZnO target mixed with Al2O3 of 2 wt. %. All of the films deposited were (0001) oriented single-crystalline films with an internal stress. The stress was increased and degraded the crystallinity of the epitaxial film as a deposition rate was increased, and thus the Hall mobility and the resistivity of the film were, respectively, decreased and increased. However, the resistivities obtained were in the range about 1.4–3.0×10−4 Ω cm, the values comparable to those for indium tin oxide film presently used as a transparent electrode.</jats:p>