Description:
<jats:p>The observation of CO2 (10.6 μm wavelength) laser-induced photoeffects in Ge and PAsGa junctions is reported. A moderately nonlinear low laser excitation intensity regime and a strongly nonlinear high laser excitation intensity behavior are observer in Ge junctions as was previously reported in Si junctions. Two strongly nonlinear behaviors are observed in PAsGa junctions. A opposite sign prepulse is also observed as in Si junctions. The observation of the same photoeffects in three different materials is proof of the universal character of the studied phenomenon. A interpretation on the basis of a hot carrier plasma model is discussed.</jats:p>