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Media type:
E-Article
Title:
Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap
Contributor:
Shafarman, William N.;
Klenk, Reiner;
McCandless, Brian E.
imprint:
AIP Publishing, 1996
Published in:Journal of Applied Physics
Language:
English
DOI:
10.1063/1.361431
ISSN:
0021-8979;
1089-7550
Origination:
Footnote:
Description:
<jats:p>Thin-film solar cells have been fabricated from Cu(InGa)Se2 films which were deposited by four-source elemental evaporation with [Ga]/([In]+[Ga]) from 0.27 to 0.69 corresponding to a band gap from 1.16 to 1.45 eV. The films were intentionally deposited with no grading of the Ga and In to avoid gradients in their electrical and optical properties. X-ray diffraction, energy-dispersive x-ray spectroscopy, and Auger electron spectroscopy show that the films have uniform composition with no change in structure and morphology. Glass/Mo/Cu(InGa)Se2/CdS/ZnO devices have open-circuit voltage increasing over the entire band gap range to 788 mV and 15% total area efficiency for band gap less than 1.3 eV, or [Ga]/([In]+[Ga]) less than 0.5. A decrease in device efficiency with higher Ga content is caused primarily by a lower fill factor. Analysis of current–voltage and quantum efficiency measurements show that this results from a voltage-dependent current collection.</jats:p>