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Media type:
E-Article
Title:
Resistivity and LIII-edge absorption studies in valence fluctuation system Ce2Ni3Si5
Contributor:
Mazumdar, Chandan;
Nagarajan, R.;
Godart, C.;
Gupta, L. C.;
Padalia, B. D.;
Vijayaraghavan, R.
imprint:
AIP Publishing, 1996
Published in:
Journal of Applied Physics, 79 (1996) 8, Seite 6347-6348
Language:
English
DOI:
10.1063/1.362691
ISSN:
0021-8979;
1089-7550
Origination:
Footnote:
Description:
<jats:p>From our x-ray (LIII-edge) absorption (XAS) investigations of Ce2Ni3Si5, we show that Ce-valence is temperature dependent; it is 3.07 and 3.11 at 280 and 8 K, respectively. We also report on our resistivity measurements of two related materials Ce2−xRxNi3Si5 (R=Y, Gd and x=0.1). Absence of any qualitative difference in the resistivities of these two samples suggests that the enhancement of resistivity at low temperature on introduction of impurity atoms is due to Kondo hole scattering implying that Ce2Ni3Si5 is a concentrated Kondo system.</jats:p>