Description:
<jats:p>Evaluation of thermal stresses induced on silicon wafers during flash annealing with incoherent light from a xenon lamp has been performed. The thermally induced stresses have been computed taking into account that the slip planes, in 〈100〉 silicon crystal, are {111} and the slip directions in the plane are 〈110〉. The computed stresses have been compared with the yield stress of the material, to determine the threshold of damage introduction by the annealing process. For the light flash durations shorter than 500 μsec, a preheating of the sample is necessary to obtain a good annealing of a 1000 Å implanted layer without defects introduction. A relationship among flash duration, preheating temperature and flash energy density has been established allowing the identification of the best annealing conditions. The computed results have been compared with experimental annealing data obtained on 〈100〉 silicon, phosphorus implanted at 10 keV, 1.5×1015 at/cm2 and irradiated with an original flash annealing system set up in our laboratory.</jats:p>